IRF7853TRPBF International Rectifier, IRF7853TRPBF Datasheet

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IRF7853TRPBF

Manufacturer Part Number
IRF7853TRPBF
Description
MOSFET N-CH 100V 8.3A 8-SOIC
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRF7853TRPBF

Package / Case
8-SOIC (3.9mm Width)
Mounting Type
Surface Mount
Power - Max
2.5W
Fet Type
MOSFET N-Channel, Metal Oxide
Gate Charge (qg) @ Vgs
39nC @ 10V
Vgs(th) (max) @ Id
4.9V @ 100µA
Current - Continuous Drain (id) @ 25° C
8.3A
Drain To Source Voltage (vdss)
100V
Fet Feature
Standard
Rds On (max) @ Id, Vgs
18 mOhm @ 8.3A, 10V
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
8.3 A
Power Dissipation
2.5 W
Mounting Style
SMD/SMT
Gate Charge Qg
28 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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l
l
l
l
l
l
l
Applications
Benefits
www.irf.com
V
V
I
I
I
P
dv/dt
T
T
R
R
Notes  through
Absolute Maximum Ratings
Thermal Resistance
D
D
DM
J
STG
DS
GS
D
θJL
θJA
in Universal Input (36-75Vin) Isolated
DC-DC Converters
Converters
Synchronous Buck DC-DC Applications
Topology for 18-36Vin Isolated DC-DC
@ T
@ T
Effective C
App. Note AN1001)
and Current
Rectification Switch for 15Vout
Primary Side Switch in Bridge Topology
Primary Side Switch in Push-Pull
Secondary Side Synchronous
Suitable for 48V Non-Isolated
Low Gate to Drain Charge to Reduce
Fully Characterized Capacitance Including
Fully Characterized Avalanche Voltage
Switching Losses
@T
A
A
A
= 25°C
= 70°C
= 25°C
OSS
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Junction-to-Drain Lead
Junction-to-Ambient (PCB Mount)
to Simplify Design, (See
are on page 8
Parameter
Parameter
h
GS
GS
@ 10V
@ 10V
ei
G
S
S
S
V
100V
DSS
1
2
3
4
Top View
Typ.
–––
–––
18m:@VGS = 10V
-55 to + 150
HEXFET
R
8
6
5
7
IRF7853PbF
Max.
DS(on)
± 20
0.02
100
8.3
6.6
2.5
5.1
66
D
D
D
D
A
A
Max.
®
max
20
50
Power MOSFET
SO-8
Units
Units
W/°C
°C/W
8.3A
V/ns
°C
W
V
A
I
D
1/5/06
1

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IRF7853TRPBF Summary of contents

Page 1

Applications Primary Side Switch in Bridge Topology l in Universal Input (36-75Vin) Isolated DC-DC Converters Primary Side Switch in Push-Pull l Topology for 18-36Vin Isolated DC-DC Converters Secondary Side Synchronous l Rectification Switch for 15Vout Suitable for 48V Non-Isolated l ...

Page 2

IRF7853PbF Static @ T = 25°C (unless otherwise specified) J Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆V /∆T Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) I Drain-to-Source Leakage Current DSS I ...

Page 3

VGS TOP 15V 10V 8.0V 7.0V 10 6.0V 5.5V 5.0V BOTTOM 4.5V 1 0.1 ≤ 60µs PULSE WIDTH Tj = 25°C 4.5V 0.01 0.01 0 Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 100.0 T ...

Page 4

IRF7853PbF 100000 0V MHZ C iss = SHORTED C rss = oss = 10000 Ciss 1000 Coss Crss ...

Page 5

CaseTemperature (°C) Fig 9. Maximum Drain Current vs. Ambient Temperature 100 D = 0.50 0.20 10 0.10 0.05 1 0.02 0.01 0.1 0.01 SINGLE PULSE ( THERMAL ...

Page 6

IRF7853PbF 10V 125° 25° Drain Current (A) Fig 12. On-Resistance vs. Drain Current VCC DUT 0 ...

Page 7

SO-8 Package Details 0.25 [.010 NOTES : 1. DIMENS IONING & T OLERANCING PER ASME Y14.5M-1994. 2. CONTROLLING ...

Page 8

IRF7853PbF SO-8 Tape and Reel 8.1 ( .318 ) 7.9 ( .312 ) NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. ...

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