STD90N02L-1 STMicroelectronics, STD90N02L-1 Datasheet - Page 8

• Manufacturer Part Number: STD90N02L-1
• Description: MOSFET N-CH 25V 60A IPAK
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STD90N02L-1

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 6 mOhm @ 30A, 10V
• Drain To Source Voltage (vdss): 25V
• Current - Continuous Drain (id) @ 25° C: 60A
• Vgs(th) (max) @ Id: 1.8V @ 250µA
• Gate Charge (qg) @ Vgs: 22nC @ 5V
• Input Capacitance (ciss) @ Vds: 2050pF @ 16V
• Power - Max: 70W
• Mounting Type: Through Hole
• Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Figure 14. Allowable I
Electrical characteristics
8/17
The previous curve gives the single pulse safe operating area for unclamped inductive
loads, under the following conditions:
P
E
Where:
I
P
t
AV
AV
D(AVE)
AS(AR)
D(AVE)
is the allowable current in avalanche
is the time in avalanche
is the average power dissipation in avalanche (single pulse)
=0.5*(1.3*B
=P
D(AVE)
AV
vs time in avalanche
*t
AV
VDSS
*I
AV
)
STD90N02L - STD90N02L-1