STD90N02L-1 STMicroelectronics, STD90N02L-1 Datasheet - Page 4

• Manufacturer Part Number: STD90N02L-1
• Description: MOSFET N-CH 25V 60A IPAK
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STD90N02L-1

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 6 mOhm @ 30A, 10V
• Drain To Source Voltage (vdss): 25V
• Current - Continuous Drain (id) @ 25° C: 60A
• Vgs(th) (max) @ Id: 1.8V @ 250µA
• Gate Charge (qg) @ Vgs: 22nC @ 5V
• Input Capacitance (ciss) @ Vds: 2050pF @ 16V
• Power - Max: 70W
• Mounting Type: Through Hole
• Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Electrical characteristics
2
4/17
Electrical characteristics
(Tcase =25°C unless otherwise specified)
Table 4.
Table 5.
1.
2. Q
V
Symbol
Symbol
Q
R
V
(BR)DSS
g
I
C
OSS
I
C
Pulsed: pulse duration = 300µs, duty cycle 1.5%
DS(on)
C
Q
Q
GS(th)
GSS
fs
R
DSS
Q
oss.
oss
rss
iss
gs
gd
G
g
(1)
(2)
= C
oss
Forward
transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Gate input resistance
Output charge
Drain-source breakdown
voltage
Zero gate voltage drain
current (V
Gate body leakage
current (V
Gate threshold voltage
Static drain-source on
resistance
* D Vin, C
On /off states
Dynamic
Parameter
Parameter
oss
GS
DS
= C
= 0)
= 0)
gd
+ C
gd.
(see
V
V
V
V
(see Figure 17)
f=1MHz Gate DC Bias =0
test signal level =20mV
open drain
V
I
V
V
V
V
V
V
D
DS
DS
DD
GS
DS
DS
DS
GS
DS
GS
GS
Buck
= 25mA, V
=10V, I
= V
= 10V, I
= 5V, I
=10V, I
=16V, f=1MHz, V
=10V, V
=5V
= 20V,
= 20V,Tc = 125°C
= ±20V
Test conditions
Test conditions
converter)
GS
, I
D
D
D
D
= 15A
D
GS
= 60A
= 30A
GS
= 18A
= 250µA
=0V
= 0
GS
=0
STD90N02L - STD90N02L-1
Min.
Min.
0.5
25
1
0.0052
0.007
2050
Typ.
Typ.
545
1.8
7.7
3.5
1.5
27
70
17
14
0.006
0.011
Max.
±
Max.
100
10
22
1
3
Unit
Unit
µA
µA
nA
nC
nC
nC
nC
pF
pF
pF
V
V
Ω
Ω
S
Ω