IRFR3410PBF International Rectifier, IRFR3410PBF Datasheet

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... HEXFET Power MOSFET V R DSS 100V D-Pak IRFR3410 @ 10V GS @ 10V GS - 175 300 (1.6mm from case ) Typ. ––– ––– ––– IRFR3410PbF IRFU3410PbF max I DS(on) D 31A † 39mΩ I-Pak IRFU3410 Max. Units 100 V ± 20 31† 22 ...

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Static @ T = 25°C (unless otherwise specified) J Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆V Breakdown Voltage Temp. Coefficient /∆T (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) I Drain-to-Source Leakage Current DSS Gate-to-Source Forward ...

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PULSE WIDTH Tj = 25° Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1000 100 175° 25° 50V 20µs ...

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0V MHZ C iss = rss = oss = 10000 Ciss 1000 Coss 100 Crss 10 ...

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LIMITED BY PACKAGE 100 Case Temperature (°C) Fig 9. Maximum Drain Current Vs. Case Temperature 0.50 0.20 0.10 0.1 0.05 0.02 ...

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D.U 20V GS 0.01 Ω Fig 12a. Unclamped Inductive Test Circuit Fig 12b. Unclamped Inductive Waveforms Charge ...

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D.U.T + ‚ -  Driver Gate Drive P.W. D.U.T. I Waveform SD Reverse Recovery Current D.U.T. V Waveform DS Re-Applied Voltage Inductor Curent Fig 14. For N-Channel HEXFET www.irf.com + • • ƒ • - „ • ...

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EXAMPLE: THIS IS AN IRFR120 WITH ASSEMBLY LOT CODE 1234 AS SEMBLED ON WW 16, 1999 ASSEMBLY LINE "A" Note: "P" sembly line position indicates "Lead-Free" OR INTE RNATIONAL 8 INTERNATIONAL RECT IFIER IRFU120 LOGO ...

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E XAMPLE: T HIS IS AN IRFU120 WIT H ASSE MBLY LOT CODE 5678 AS SEMBLED ON WW 19, 1999 ASSE MBLY LINE "A" Note: "P" embly line pos ition indicates "Lead-Free" OR INT ...

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TR 12.1 ( .476 ) 11.9 ( .469 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 13 INCH NOTES : 1. OUTLINE CONFORMS ...

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Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...