IRFR3410PBF International Rectifier, IRFR3410PBF Datasheet - Page 2

• Manufacturer Part Number: IRFR3410PBF
• Description: MOSFET N-CH 100V 31A DPAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFR3410PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 39 mOhm @ 18A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 31A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 56nC @ 10V
• Input Capacitance (ciss) @ Vds: 1690pF @ 25V
• Power - Max: 3W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 39 m Ohms
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 31 A
• Power Dissipation: 110 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Fall Time: 13 ns
• Gate Charge Qg: 37 nC
• Minimum Operating Temperature: - 55 C
• Rise Time: 27 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRFR3410PBF

Avalanche Characteristics
Diode Characteristics
Dynamic @ T
Static @ T
E
I
R
I
I
V
t
Q
t
V
∆V
V
I
I
g
Q
Q
Q
t
t
t
t
C
C
C
C
C
C
AR
S
SM
rr
on
DSS
GSS
d(on)
r
d(off)
f
2
AS
fs
SD
(BR)DSS
DS(on)
GS(th)
iss
oss
rss
oss
oss
oss
g
gs
gd
rr
(BR)DSS
eff.
/∆T
J
Breakdown Voltage Temp. Coefficient
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
Drain-to-Source Breakdown Voltage
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
J
= 25°C (unless otherwise specified)
J
Single Pulse Avalanche Energy‚
Avalanche Current
= 25°C (unless otherwise specified)
Parameter
Parameter
Parameter
Parameter
–––
100
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min. Typ. Max. Units
Min. Typ. Max. Units
Min. Typ. Max. Units
2.0
–––
–––
–––
–––
–––
33
Intrinsic turn-on time is negligible (turn-on is dominated by L
0.11 –––
1690 –––
1640 –––
–––
–––
–––
–––
––– -200
–––
37
220
130
–––
–––
–––
260
–––
250
34
10
11
12
27
40
26
84
13
31†
–––
56
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
250
200
4.0
1.3
125
39
20
V/°C
mΩ
nC
nC
µA
nA
ns
pF
ns
V
V
V
S
Typ.
–––
–––
I
Reference to 25°C, I
D
V
V
V
V
I
R
V
V
V
ƒ = 1.0MHz
V
V
V
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = 100A/µs „
V
V
V
V
V
V
V
D
J
J
GS
GS
DS
DS
DS
GS
GS
DS
DS
GS
DD
GS
GS
DS
GS
GS
GS
= 18A
G
= 18A
= 25°C, I
= 25°C, I
= 9.1Ω
= V
= 100V, V
= 80V, V
= 25V, I
= 50V
= 25V
= 0V, I
= 10V, I
= 20V
= -20V
= 10V, „
= 50V
= 10V „
= 0V
= 0V, V
= 0V, V
= 0V, V
GS
, I
D
S
F
DS
D
D
D
DS
DS
Conditions
= 250µA
GS
= 18A
Conditions
Conditions
= 18A, V
= 18A
= 250µA
= 18A
GS
= 0V to 80V …
Max.
= 1.0V, ƒ = 1.0MHz
= 80V, ƒ = 1.0MHz
140
= 0V, T
18
= 0V
D
www.irf.com
= 1mA „
GS
„
J
= 150°C
= 0V „
G
Units
S
+L
mJ
A
D
S
D
)