STD3NK60Z-1 STMicroelectronics, STD3NK60Z-1 Datasheet - Page 8

• Manufacturer Part Number: STD3NK60Z-1
• Description: MOSFET N-CH 600V 2.4A IPAK
• Manufacturer: STMicroelectronics
• Series: SuperMESH™r

Specifications of STD3NK60Z-1

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 3.6 Ohm @ 1.2A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 2.4A
• Vgs(th) (max) @ Id: 4.5V @ 50µA
• Gate Charge (qg) @ Vgs: 11.8nC @ 10V
• Input Capacitance (ciss) @ Vds: 311pF @ 25V
• Power - Max: 45W
• Mounting Type: Through Hole
• Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 2.4A
• Drain Source Voltage Vds: 600V
• On Resistance Rds(on): 3.3ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3.75V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

STP3NK60Z /FP - STB3NK60Z - STD3NK60Z - STD3NK60Z-1
8/15
DIM.
DIA.
G1
D1
H2
F1
F2
L2
L4
L5
L6
L7
L9
G
A
C
D
E
F
15.25
MIN.
4.40
1.23
2.40
0.49
0.61
1.14
1.14
4.95
10.0
13.0
2.65
3.75
2.4
6.2
3.5
L5
TO-220 MECHANICAL DATA
L7
Dia.
TYP.
1.27
16.4
mm
L6
L2
MAX.
10.40
15.75
4.60
1.32
2.72
0.70
0.88
1.70
1.70
5.15
14.0
2.95
3.93
3.85
2.7
6.6
L9
0.173
0.094
0.393
0.600
0.244
0.137
0.048
0.094
0.019
0.024
0.044
0.044
0.194
0.511
0.104
0.147
MIN.
L4
0.050
0.645
TYP.
inch
P011C
MAX.
0.181
0.051
0.107
0.027
0.034
0.067
0.067
0.203
0.106
0.409
0.551
0.116
0.620
0.260
0.154
0.151