STD3NK60Z-1 STMicroelectronics, STD3NK60Z-1 Datasheet - Page 4

• Manufacturer Part Number: STD3NK60Z-1
• Description: MOSFET N-CH 600V 2.4A IPAK
• Manufacturer: STMicroelectronics
• Series: SuperMESH™r

Specifications of STD3NK60Z-1

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 3.6 Ohm @ 1.2A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 2.4A
• Vgs(th) (max) @ Id: 4.5V @ 50µA
• Gate Charge (qg) @ Vgs: 11.8nC @ 10V
• Input Capacitance (ciss) @ Vds: 311pF @ 25V
• Power - Max: 45W
• Mounting Type: Through Hole
• Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 2.4A
• Drain Source Voltage Vds: 600V
• On Resistance Rds(on): 3.3ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3.75V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

STP3NK60Z /FP - STB3NK60Z - STD3NK60Z - STD3NK60Z-1
Safe Operating Area
Safe Operating Area For TO-220FP
Output Characteristics
4/15
Thermal Impedance
Thermal Impedance For TO-220FP
Transfer Characteristics