STD7NS20T4 STMicroelectronics, STD7NS20T4 Datasheet - Page 4

• Manufacturer Part Number: STD7NS20T4
• Description: MOSFET N-CH 200V 7A DPAK
• Manufacturer: STMicroelectronics
• Series: MESH OVERLAY™r

Specifications of STD7NS20T4

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 400 mOhm @ 3.5A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 7A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 45nC @ 10V
• Input Capacitance (ciss) @ Vds: 540pF @ 25V
• Power - Max: 45W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.35 Ohms
• Forward Transconductance Gfs (max / Min): 4 S
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 7 A
• Power Dissipation: 45 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-6566-2; STD7NS20T4

STD7NS20 / STD7NS20-1
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 3: Switching Times Test Circuit For
Resistive Load
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
4/8
Fig. 2: Unclamped Inductive Waveform
Fig. 4: Gate Charge test Circuit