STD7NS20T4 STMicroelectronics, STD7NS20T4 Datasheet

MOSFET N-CH 200V 7A DPAK

STD7NS20T4

Manufacturer Part Number
STD7NS20T4
Description
MOSFET N-CH 200V 7A DPAK
Manufacturer
STMicroelectronics
Series
MESH OVERLAY™r
Datasheet

Specifications of STD7NS20T4

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
400 mOhm @ 3.5A, 10V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
7A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
45nC @ 10V
Input Capacitance (ciss) @ Vds
540pF @ 25V
Power - Max
45W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.35 Ohms
Forward Transconductance Gfs (max / Min)
4 S
Drain-source Breakdown Voltage
200 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
7 A
Power Dissipation
45 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-6566-2
STD7NS20T4

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
STD7NS20T4
Manufacturer:
ST
Quantity:
200
Part Number:
STD7NS20T4
Manufacturer:
ST
Quantity:
20 000
Part Number:
STD7NS20T4-1
Manufacturer:
ST
0
Part Number:
STD7NS20T4-D7NS20
Manufacturer:
ST
0
DESCRIPTION
Using the latest high voltage MESH OVERLAY™
process, STMicroelectronics has designed an ad-
vanced family of power MOSFETs with outstanding
performance. The new patented STrip layout cou-
pled with the Company’s proprietary edge termina-
tion structure, makes it suitable in coverters for
lighting applications.
APPLICATIONS
ABSOLUTE MAXIMUM RATINGS
(•)Pulse width limited by safe operating area
June 2003
STD7NS20
STD7NS20-1
TYPICAL R
EXTREMELY HIGH dv/dt CAPABILITY
100% AVALANCHE TESTED
VERY LOW INTRINSIC CAPACITANCES
ADD SUFFIX “T4” FOR ORDERING IN TAPE &
REEL
HIGH CURRENT, HIGH SPEED SWITCHING
SWITH MODE POWER SUPPLIES (SMPS)
DC-DC CONVERTERS FOR TELECOM,
INDUSTRIAL, AND LIGHTING EQUIPMENT
Symbol
dv/dt (1)
I
V
DM
P
V
V
T
DGR
TOT
I
I
T
stg
DS
GS
D
D
TYPE
j
( )
Drain-source Voltage (V
Drain-gate Voltage (R
Gate- source Voltage
Drain Current (continuos) at T
Drain Current (continuos) at T
Drain Current (pulsed)
Total Dissipation at T
Derating Factor
Peak Diode Recovery voltage slope
Storage Temperature
Max. Operating Junction Temperature
DS
(on) = 0.35
200 V
200 V
V
DSS
N-CHANNEL 200V - 0.35 - 7A DPAK / IPAK
< 0.40
< 0.40
R
DS(on)
C
GS
Parameter
= 25°C
GS
= 20 k )
= 0)
C
C
= 25°C
= 100°C
7 A
7 A
I
D
(1) I
MESH OVERLAY™ MOSFET
SD
INTERNAL SCHEMATIC DIAGRAM
7A, di/dt 300 A/ s, V
TO-252
DPAK
1
3
–65 to 150
DD
STD7NS20-1
Value
± 20
0.37
200
200
150
4.4
28
45
V
7
5
(BR)DSS
STD7NS20
PRELIMINARY DATA
, Tj T
TO-251
IPAK
jMAX
1
2
3
W/°C
Unit
V/ns
°C
°C
W
V
V
V
A
A
A
1/8

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STD7NS20T4 Summary of contents

Page 1

... ADD SUFFIX “T4” FOR ORDERING IN TAPE & REEL DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an ad- vanced family of power MOSFETs with outstanding performance. The new patented STrip layout cou- pled with the Company’s proprietary edge termina- tion structure, makes it suitable in coverters for lighting applications ...

Page 2

STD7NS20 / STD7NS20-1 THERMAL DATA Rthj-case Thermal Resistance Junction-case Max Rthj-amb Thermal Resistance Junction-ambient Max T Maximum Lead Temperature For Soldering Purpose l AVALANCHE CHARACTERISTICS Symbol I Avalanche Current, Repetitive or Not-Repetitive AR (pulse width limited Single ...

Page 3

ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING ON Symbol Parameter t Turn-on Delay Time d(on) t Rise Time r Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain Charge gd SWITCHING OFF Symbol Parameter t Off-voltage Rise Time r(Voff) Fall Time ...

Page 4

STD7NS20 / STD7NS20-1 Fig. 1: Unclamped Inductive Load Test Circuit Fig. 3: Switching Times Test Circuit For Resistive Load Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 4/8 Fig. 2: Unclamped Inductive Waveform Fig. 4: Gate ...

Page 5

TO-252 (DPAK) MECHANICAL DATA mm DIM. MIN. TYP. A 2.20 A1 0.90 A2 0.03 B 0.64 B2 5.20 C 0.45 C2 0.48 D 6.00 E 6.40 G 4.40 H 9.35 L2 0 STD7NS20 / STD7NS20-1 ...

Page 6

STD7NS20 / STD7NS20-1 DIM. MIN. A 2.2 A1 0.9 A3 0.7 B 0. 0. 6.4 G 4 0.8 L2 6/8 TO-251 (IPAK) MECHANICAL DATA ...

Page 7

DPAK FOOTPRINT All dimensions are in millimeters TAPE AND REEL SHIPMENT (suffix ”T4”)* TAPE MECHANICAL DATA mm inch DIM. MIN. MAX. MIN. A0 6.8 7 0.267 0.275 B0 10.4 10.6 0.409 0.417 B1 12.1 D 1.5 1.6 0.059 0.063 D1 ...

Page 8

... No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied ...

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