IRF7424TRPBF International Rectifier, IRF7424TRPBF Datasheet - Page 7

• Manufacturer Part Number: IRF7424TRPBF
• Description: MOSFET P-CH 30V 11A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7424TRPBF

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 13.5 mOhm @ 11A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 11A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 110nC @ 10V
• Input Capacitance (ciss) @ Vds: 4030pF @ 25V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 22 mOhms
• Drain-source Breakdown Voltage: - 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: - 11 A
• Power Dissipation: 2.5 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 75 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRF7424PBFTR; IRF7424TRPBF; IRF7424TRPBFTR

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2.2
2.0
1.8
1.6
1.4
1.2
1.0
-75
-50
Fig 15. Typical Vgs(th) Vs.
Junction Temperature
-25
T J , Temperature ( °C )
0
25
50
I D = -250µA
75
100
125
150
120
100
80
60
40
20
0
0.001
Fig 16. Typical Power Vs. Time
0.010
IRF7424PbF
0.100
Time (sec)
1.000
10.000
100.000
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