IRF7424TRPBF International Rectifier, IRF7424TRPBF Datasheet

MOSFET P-CH 30V 11A 8-SOIC

IRF7424TRPBF

Manufacturer Part Number
IRF7424TRPBF
Description
MOSFET P-CH 30V 11A 8-SOIC
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRF7424TRPBF.pdf (9 pages)

Specifications of IRF7424TRPBF

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
13.5 mOhm @ 11A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
11A
Vgs(th) (max) @ Id
2.5V @ 250µA
Gate Charge (qg) @ Vgs
110nC @ 10V
Input Capacitance (ciss) @ Vds
4030pF @ 25V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
22 mOhms
Drain-source Breakdown Voltage
- 30 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
- 11 A
Power Dissipation
2.5 W
Mounting Style
SMD/SMT
Gate Charge Qg
75 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IRF7424PBFTR
IRF7424TRPBF
IRF7424TRPBFTR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Meier Automation Equipment Co., Limited Meier Automation Equipment Co., Limited
Part Number:
IRF7424TRPBF
Manufacturer:
IR
Quantity:
20 000
Company:
Amily Shenzhen XNWY Technology Co., Ltd Amily Shenzhen XNWY Technology Co., Ltd
Part Number:
IRF7424TRPBF
0
Company:
H&T Electronics H&T Electronics
Part Number:
IRF7424TRPBF
Quantity:
10 000
Company:
H&T Electronics H&T Electronics
Part Number:
IRF7424TRPBF
Quantity:
10 420
l
l
l
l
l
Thermal Resistance
These P-Channel MOSFETs from International
Rectifier utilize advanced processing techniques to
achieve the extremely low on-resistance per silicon
area. This benefit provides the designer with an
extremely efficient device for use in battery and load
management applications..
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infrared, or wave soldering technique
Description
www.irf.com
R
V
I
I
I
P
P
V
T
D
D
DM
J,
DS
D
D
GS
θJA
@ T
@ T
Ultra Low On-Resistance
P-Channel MOSFET
Surface Mount
Available in Tape & Reel
Lead-Free
@T
@T
T
STG
A
A
A
A
= 70°C
= 25°C
= 25°C
= 70°C
Maximum Junction-to-Ambient
Drain- Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current 
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
Parameter
Parameter
ƒ
ƒ
GS
GS
ƒ
@ -10V
@ -10V
G
S
S
S
V
-30V
DSS
1
2
3
4
Top View
R
HEXFET Power MOSFET
8
6
5
7
DS(on)
13.5@V
IRF7424PbF
-55 to + 150
22@V
Max.
Max.
-9.3
± 20
50
D
D
D
D
-30
-11
-47
2.5
1.6
A
20
GS
max (mW)
GS
= -4.5V
= -10V
SO-8
-8.8A
-11A
mW/°C
Units
Units
I
°C/W
D
°C
V
A
V
1
10/04/04

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IRF7424TRPBF Summary of contents

Page 1

Ultra Low On-Resistance P-Channel MOSFET l l Surface Mount l Available in Tape & Reel Lead-Free l Description These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit ...

Page 2

IRF7424PbF Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆V Breakdown Voltage Temp. Coefficient /∆T (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward ...

Page 3

VGS TOP -10V -4.5V -3.7V -3.5V -3.3V -3.0V 100 -2.7V BOTTOM -2. -2.5V 20µs PULSE WIDTH 0.1 0 Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics 100 ...

Page 4

IRF7424PbF 6000 1MHz iss rss gd 5000 oss iss 4000 3000 2000 C oss 1000 ...

Page 5

T , Case Temperature ( C) C Fig 9. Maximum Drain Current Vs. Case Temperature 100 D = 0.50 0.20 10 0.10 0.05 0.02 1 0.01 SINGLE PULSE (THERMAL ...

Page 6

IRF7424PbF 0.035 0.030 0.025 0.020 0.015 0.010 2.0 4.0 6.0 -V GS, Gate -to -Source Voltage (V) Fig 12. Typical On-Resistance Vs. Gate Voltage Charge Fig 14a. Basic Gate Charge Waveform 6 ...

Page 7

Temperature ( °C ) Fig 15. Typical Vgs(th) Vs. Junction Temperature www.irf.com 120 100 -250µ ...

Page 8

IRF7424PbF SO-8 Package Outline Dimensions are shown in millimeters (inches 0.25 [.010 NOT DIMENS IONING & ...

Page 9

SO-8 Tape and Reel Dimensions are shown in millimeters (inches) NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS ...

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