IRF7424TRPBF International Rectifier, IRF7424TRPBF Datasheet - Page 5

• Manufacturer Part Number: IRF7424TRPBF
• Description: MOSFET P-CH 30V 11A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7424TRPBF

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 13.5 mOhm @ 11A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 11A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 110nC @ 10V
• Input Capacitance (ciss) @ Vds: 4030pF @ 25V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 22 mOhms
• Drain-source Breakdown Voltage: - 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: - 11 A
• Power Dissipation: 2.5 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 75 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRF7424PBFTR; IRF7424TRPBF; IRF7424TRPBFTR

www.irf.com
0.01
12
10
100
0.1
8
6
4
2
0
10
0.00001
1
Fig 9. Maximum Drain Current Vs.
25
D = 0.50
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
0.20
0.10
0.05
0.02
0.01
50
Case Temperature
T , Case Temperature ( C)
C
(THERMAL RESPONSE)
0.0001
SINGLE PULSE
75
100
0.001
125
°
t , Rectangular Pulse Duration (sec)
1
150
0.01
0.1
Fig 10a. Switching Time Test Circuit
Fig 10b. Switching Time Waveforms
V
10%
90%
V
GS
DS
1. Duty factor D = t / t
2. Peak T = P
t
Notes:
d(on)
≤ 0.1 %
1
t
≤ 1
J
r
IRF7424PbF
DM
x Z
1
thJA
P
2
DM
+ T
t
10
d(off)
A
t
1
t
t
f
2
-
+
5
100