IRFR5305TRLPBF International Rectifier, IRFR5305TRLPBF Datasheet - Page 4

• Manufacturer Part Number: IRFR5305TRLPBF
• Description: MOSFET P-CH 55V 31A DPAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFR5305TRLPBF

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 65 mOhm @ 16A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 31A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 63nC @ 10V
• Input Capacitance (ciss) @ Vds: 1200pF @ 25V
• Power - Max: 110W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Transistor Polarity: P Channel
• Continuous Drain Current Id: -31A
• Drain Source Voltage Vds: -55V
• On Resistance Rds(on): 65mohm
• Rds(on) Test Voltage Vgs: -10V
• Peak Reflow Compatible (260 C): Yes
• Rohs Compliant: Yes
• Drain-source Breakdown Voltage: - 55 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: - 28 A
• Power Dissipation: 89 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 42 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IRFR/U5305PbF
4
2500
2000
1500
1000
1000
500
100
10
0
Fig 5. Typical Capacitance Vs.
Fig 7. Typical Source-Drain Diode
0.4
1
Drain-to-Source Voltage
C
C
C
-V
iss
oss
rss
-V
SD
DS
Forward Voltage
V
C
C
C
0.8
, Drain-to-Source Voltage (V)
GS
iss
rss
oss
, Source-to-Drain Voltage (V)
T = 175°C
J
= 0V,
= C
= C
= C
gs
gd
ds
+ C
+ C
10
1.2
gd
gd
f = 1MHz
T = 25°C
J
, C
ds
1.6
SHORTED
V
GS
= 0V
100
2.0
A
A
1000
100
20
16
12
10
8
4
0
Fig 8. Maximum Safe Operating Area
1
0
1
Fig 6. Typical Gate Charge Vs.
I
T
T
Single Pulse
D
C
J
= -16A
Gate-to-Source Voltage
= 25°C
= 175°C
OPERATION IN THIS AREA LIMITED
10
-V
Q , Total Gate Charge (nC)
DS
G
, Drain-to-Source Voltage (V)
20
BY R
V
V
30
10
DS
DS
DS(on)
= -44V
= -28V
FOR TEST CIRCUIT
SEE FIGURE 13
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40
50
100µs
1ms
10ms
100
60
A
A