IRFR5305TRLPBF International Rectifier, IRFR5305TRLPBF Datasheet - Page 3

• Manufacturer Part Number: IRFR5305TRLPBF
• Description: MOSFET P-CH 55V 31A DPAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFR5305TRLPBF

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 65 mOhm @ 16A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 31A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 63nC @ 10V
• Input Capacitance (ciss) @ Vds: 1200pF @ 25V
• Power - Max: 110W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Transistor Polarity: P Channel
• Continuous Drain Current Id: -31A
• Drain Source Voltage Vds: -55V
• On Resistance Rds(on): 65mohm
• Rds(on) Test Voltage Vgs: -10V
• Peak Reflow Compatible (260 C): Yes
• Rohs Compliant: Yes
• Drain-source Breakdown Voltage: - 55 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: - 28 A
• Power Dissipation: 89 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 42 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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Fig 3. Typical Transfer Characteristics
1000
Fig 1. Typical Output Characteristics
100
100
10
10
1
1
0.1
4
TOP
BOTTOM - 4.5V
-V
-V
5
- 15V
- 10V
- 8.0V
- 7.0V
- 6.0V
- 5.5V
- 5.0V
VGS
DS
GS
, Gate-to-Source Voltage (V)
, Drain-to-Source Voltage (V)
T = 25°C
J
6
1
7
-4.5V
T = 175°C
V
20µs PULSE WIDTH
20µs PULSE WIDTH
T = 25°C
J
J
c
DS
= -25V
10
8
9
100
10
A
A
1000
100
10
2.0
1.5
1.0
0.5
0.0
Fig 2. Typical Output Characteristics
1
0.1
-60 -40 -20
TOP
BOTTOM - 4.5V
I
D
Fig 4. Normalized On-Resistance
= -27A
IRFR/U5305PbF
-V
T , Junction Temperature (°C)
- 15V
- 10V
- 8.0V
- 7.0V
- 6.0V
- 5.5V
- 5.0V
J
VGS
DS
0
, Drain-to-Source Voltage (V)
Vs. Temperature
1
20
40
60
-4.5V
80 100 120 140 160 180
20µs PULSE WIDTH
T = 175°C
C
J
10
V
GS
= -10V
3
100
A
A