IRFR5305TRLPBF International Rectifier, IRFR5305TRLPBF Datasheet

MOSFET P-CH 55V 31A DPAK

IRFR5305TRLPBF

Manufacturer Part Number
IRFR5305TRLPBF
Description
MOSFET P-CH 55V 31A DPAK
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRFR5305PBF.pdf (11 pages)

Specifications of IRFR5305TRLPBF

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
65 mOhm @ 16A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
31A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
63nC @ 10V
Input Capacitance (ciss) @ Vds
1200pF @ 25V
Power - Max
110W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Transistor Polarity
P Channel
Continuous Drain Current Id
-31A
Drain Source Voltage Vds
-55V
On Resistance Rds(on)
65mohm
Rds(on) Test Voltage Vgs
-10V
Peak Reflow Compatible (260 C)
Yes
Rohs Compliant
Yes
Drain-source Breakdown Voltage
- 55 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
- 28 A
Power Dissipation
89 W
Mounting Style
SMD/SMT
Gate Charge Qg
42 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
IRFR5305TRLPBF
Manufacturer:
MOLEX
Quantity:
2 000
www.irf.com
l
l
l
l
l
l
l
Description
Fifth Generation HEXFETs from International Rectifier utilize
advanced processing techniques to achieve extremely low
on-resistance per silicon area. This benefit, combined with
the fast switching speed and ruggedized device design that
HEXFET
the designer with an extremely efficient and reliable device
for use in a wide variety of applications.
The D-Pak is designed for surface mounting using vapor
phase, infrared, or wave soldering techniques. The straight
lead version (IRFU series) is for through-hole mounting
applications. Power dissipation levels up to 1.5 watts are
possible in typical surface mount applications.
Absolute Maximum Ratings
Thermal Resistance
I
I
I
P
V
E
I
E
dv/dt
T
T
R
R
R
D
D
DM
AR
J
STG
D
GS
AS
AR
θJC
θJA
θJA
@ T
@ T
Surface Mount (IRFR5305)
Advanced Process Technology
Ultra Low On-Resistance
Straight Lead (IRFU5305)
Fast Switching
Fully Avalanche Rated
Lead-Free
@T
C
C
C
= 100 C
= 25 C
= 25 C
®
Power MOSFETs are well known for, provides
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current †
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy‚†
Avalanche Current†
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt Ġ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
Junction-to-Case
Junction-to-Ambient (PCB mount)*
Junction-to-Ambient**
Parameter
Parameter
GS
GS
@ -10V
@ -10V
G
Typ.
IRFR5305
300 (1.6mm from case )
–––
–––
–––
D
S
D-Pak
10 lbf•in (1.1N•m)
HEXFET
-55 to + 175
Max.
-110
0.71
± 20
-5.0
110
280
-31
-22
-16
11
R
IRFR5305PbF
IRFU5305PbF
®
DS(on)
IRFU5305
V
Power MOSFET
DSS
Max.
I
I-Pak
D
110
1.4
50
= -31A
= 0.065Ω
= -55V
PD-95025A
Units
Units
W/ C
V/ns
12/13/04
C/W
mJ
mJ
°C
W
A
V
A
1

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IRFR5305TRLPBF Summary of contents

Page 1

... Fully Avalanche Rated l l Lead-Free Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that ® HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications ...

Page 2

IRFR/U5305PbF Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆V Breakdown Voltage Temp. Coefficient /∆T (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs DSS Gate-to-Source Forward Leakage GSS Gate-to-Source Reverse ...

Page 3

VGS TOP - 15V - 10V - 8.0V - 7.0V - 6.0V - 5.5V - 5.0V BOTTOM - 4.5V 100 10 -4.5V 20µs PULSE WIDTH T = 25° 0 Drain-to-Source Voltage (V) DS ...

Page 4

IRFR/U5305PbF 2500 1MHz iss rss oss ds gd 2000 C iss C oss 1500 1000 C ...

Page 5

T , Case Temperature ( C) C Fig 9. Maximum Drain Current Vs. Case Temperature 0.50 0.20 0.10 0.05 0.1 0.02 SINGLE PULSE 0.01 ...

Page 6

IRFR/U5305PbF D.U DRIVER -20V 0.01 Ω Fig 12a. Unclamped Inductive Test Circuit Fig 12b. Unclamped Inductive Waveforms Q G -10V ...

Page 7

D.U.T + ‚ -  Reverse Polarity for P-Channel ** Use P-Channel Driver for P-Channel Measurements Driver Gate Drive D.U.T. I Reverse Recovery Current D.U.T. V Re-Applied Voltage Inductor Curent *** V www.irf.com Peak Diode ...

Page 8

IRFR/U5305PbF EXAMPLE: THIS IS AN IRFR120 WITH ASSEMBLY LOT CODE 1234 ASSEMBLED ON WW 16, 1999 IN THE ASSEMBLY LINE "A" Note: "P" in ass embly line pos ition indicates "Lead-Free" INTERNAT IONAL RECTIF IER IRFU120 LOGO 916A ...

Page 9

EXAMPLE : T HIS IS AN IRF U120 WIT H ASS EMB LY LOT CODE 5678 AS SE MBLED ON WW 19, 1999 ASS EMBLY LINE "A" Note: "P" embly line pos ition indicates ...

Page 10

IRFR/U5305PbF 12.1 ( .476 ) 11.9 ( .469 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 13 INCH NOTES : 1. OUTLINE CONFORMS ...

Page 11

Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...

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