STD2NC45-1 STMicroelectronics, STD2NC45-1 Datasheet - Page 6

• Manufacturer Part Number: STD2NC45-1
• Description: MOSFET N-CH 450V 1.5A IPAK
• Manufacturer: STMicroelectronics
• Series: SuperMESH™r

Specifications of STD2NC45-1

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 4.5 Ohm @ 500mA, 10V
• Drain To Source Voltage (vdss): 450V
• Current - Continuous Drain (id) @ 25° C: 1.5A
• Vgs(th) (max) @ Id: 3.7V @ 250µA
• Gate Charge (qg) @ Vgs: 7nC @ 10V
• Input Capacitance (ciss) @ Vds: 160pF @ 25V
• Power - Max: 30W
• Mounting Type: Through Hole
• Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 1.5A
• Drain Source Voltage Vds: 450V
• On Resistance Rds(on): 4.1ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3V
• Rohs Compliant: Yes
• Configuration: Single
• Resistance Drain-source Rds (on): 4.5 Ohms
• Drain-source Breakdown Voltage: 450 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 1.5 A
• Power Dissipation: 30 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Electrical characteristics
2.1
6/13
Figure 2.
Figure 4.
Figure 6.
Electrical characteristics (curves)
Safe operating area for IPAK
Output characteristics
Transconductance
Doc ID 9103 Rev 4
Figure 3.
Figure 5.
Figure 7.
Thermal impedance for IPAK
Transfer characteristics
Static drain-source on resistance
STD2NC45-1