STD2NC45-1 STMicroelectronics, STD2NC45-1 Datasheet - Page 4

• Manufacturer Part Number: STD2NC45-1
• Description: MOSFET N-CH 450V 1.5A IPAK
• Manufacturer: STMicroelectronics
• Series: SuperMESH™r

Specifications of STD2NC45-1

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 4.5 Ohm @ 500mA, 10V
• Drain To Source Voltage (vdss): 450V
• Current - Continuous Drain (id) @ 25° C: 1.5A
• Vgs(th) (max) @ Id: 3.7V @ 250µA
• Gate Charge (qg) @ Vgs: 7nC @ 10V
• Input Capacitance (ciss) @ Vds: 160pF @ 25V
• Power - Max: 30W
• Mounting Type: Through Hole
• Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 1.5A
• Drain Source Voltage Vds: 450V
• On Resistance Rds(on): 4.1ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3V
• Rohs Compliant: Yes
• Configuration: Single
• Resistance Drain-source Rds (on): 4.5 Ohms
• Drain-source Breakdown Voltage: 450 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 1.5 A
• Power Dissipation: 30 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Electrical characteristics
2
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Electrical characteristics
(T
Table 5.
Table 6.
1. Pulsed: pulse duration = 300 µs, duty cycle 1.5 %
Table 7.
V
Symbol
Symbol
R
Symbol
CASE
V
(BR)DSS
g
I
I
t
DS(on)
C
GS(th)
t
C
C
Q
Q
DSS
GSS
r(Voff)
fs
Q
d(on)
oss
rss
t
iss
t
t
gs
gd
c
(1)
g
r
f
= 25°C unless otherwise specified)
Drain-source
breakdown voltage
Zero gate voltage
Drain current (V
Gate-body leakage
current (V
Gate threshold voltage
Static drain-source on
resistance
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Turn-on delay time
Rise time
Off-voltage rise time
Fall time
Cross-over time
On/off states
Dynamic
Switching times
Parameter
Parameter
DS
Parameter
= 0)
GS
= 0)
Doc ID 9103 Rev 4
I
V
V
V
V
V
V
I
V
V
V
(see Figure 17)
D
D
DS
DS
GS
DS
GS
GS
DS
DS
DD
= 250µA, V
= 0.5A
V
R
(see Figure 16)
V
R
(see Figure 16)
= Max rating
= Max rating, T
= ± 30V
= V
= 10V, I
> I
= 25V, f = 1 MHz, V
= 360V, I
= 10V, R
DD
DD
G
G
Test conditions
= 4.7Ω V
= 4.7Ω, V
Test conditions
D(on)
GS
= 225V, I
= 360V, I
Test conditions
, I
D
D
x R
G
GS
D
= 0.5A
= 250µA
= 4.7Ω
= 1.5A,
GS
DS(on)max,
= 0
D
D
GS
= 0.5A
= 10V
= 1.5A,
C
= 10V
= 125°C
GS
= 0
Min.
450
Min.
2.3
Min.
-
-
-
-
-
Typ.
Typ.
27.5
Typ. Max. Unit
4.1
160
1.1
4.7
1.3
3.2
6.7
8.5
3
12
18
7
4
STD2NC45-1
Max. Unit
Max. Unit
±100
3.7
4.5
10
50
1
-
-
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
µA
µA
nA
S
V
V
Ω