IRF5803D2PBF International Rectifier, IRF5803D2PBF Datasheet - Page 8

• Manufacturer Part Number: IRF5803D2PBF
• Description: MOSFET P-CH 40V 3.4A 8-SOIC
• Manufacturer: International Rectifier
• Series: FETKY™r

Specifications of IRF5803D2PBF

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Diode (Isolated)
• Rds On (max) @ Id, Vgs: 112 mOhm @ 3.4A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 3.4A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 37nC @ 10V
• Input Capacitance (ciss) @ Vds: 1110pF @ 25V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Single Dual Drain
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 190 mOhms
• Drain-source Breakdown Voltage: - 40 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: - 3.4 A
• Power Dissipation: 2 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Fall Time: 50 ns
• Gate Charge Qg: 25 nC
• Minimum Operating Temperature: - 55 C
• Rise Time: 550 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

8
100
Fig. 17 - Maximum Forward Voltage Drop
10
1
0
0.2 0.4 0.6 0.8
Forward Voltage Drop - V
Characteristics
1
1.2 1.4 1.6 1.8
T = 150°C
T = 125°C
T = 25°C
Schottky Diode Characteristics
J
J
J
FM
(V)
2
2.2
0.001
1000
Reverse Current Vs. Reverse Voltage
0.01
100
100
0.1
Fig. 19 - Typical Junction Capacitance
10
1
0
0
Fig. 18 - Typical Values of
T = 150°C
J
5
5
Vs. Reverse Voltage
100°C
125°C
50°C
75°C
25°C
10
Reverse Voltage - V
Reverse Voltage - V (V)
10
15 20 25 30 35 40 45
15
T = 25°C
J
20
25
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R
R
30
(V)
35
40