IRF5803D2PBF International Rectifier, IRF5803D2PBF Datasheet - Page 7

• Manufacturer Part Number: IRF5803D2PBF
• Description: MOSFET P-CH 40V 3.4A 8-SOIC
• Manufacturer: International Rectifier
• Series: FETKY™r

Specifications of IRF5803D2PBF

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Diode (Isolated)
• Rds On (max) @ Id, Vgs: 112 mOhm @ 3.4A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 3.4A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 37nC @ 10V
• Input Capacitance (ciss) @ Vds: 1110pF @ 25V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Single Dual Drain
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 190 mOhms
• Drain-source Breakdown Voltage: - 40 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: - 3.4 A
• Power Dissipation: 2 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Fall Time: 50 ns
• Gate Charge Qg: 25 nC
• Minimum Operating Temperature: - 55 C
• Rise Time: 550 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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2.8
2.4
2.0
1.6
-75
-50
Fig 15. Typical Vgs(th) Vs.
Junction Temperature
-25
T J , Temperature ( °C )
0
25
I D = -250µA
50
Power Mosfet Characteristics
75
100 125
150
30
25
20
15
10
5
0
0.001
Fig 16. Typical Power Vs. Time
0.010
0.100
Time (sec)
1.000
10.000
100.000
7