IRF5803D2PBF International Rectifier, IRF5803D2PBF Datasheet - Page 7
![MOSFET P-CH 40V 3.4A 8-SOIC](/photos/5/43/54340/21-8-soic_sml.jpg)
IRF5803D2PBF
Manufacturer Part Number
IRF5803D2PBF
Description
MOSFET P-CH 40V 3.4A 8-SOIC
Manufacturer
International Rectifier
Series
FETKY™r
Datasheet
1.IRF5803D2PBF.pdf
(11 pages)
Specifications of IRF5803D2PBF
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Diode (Isolated)
Rds On (max) @ Id, Vgs
112 mOhm @ 3.4A, 10V
Drain To Source Voltage (vdss)
40V
Current - Continuous Drain (id) @ 25° C
3.4A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
37nC @ 10V
Input Capacitance (ciss) @ Vds
1110pF @ 25V
Power - Max
2W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Configuration
Single Dual Drain
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
190 mOhms
Drain-source Breakdown Voltage
- 40 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
- 3.4 A
Power Dissipation
2 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Fall Time
50 ns
Gate Charge Qg
25 nC
Minimum Operating Temperature
- 55 C
Rise Time
550 ns
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
www.irf.com
2.8
2.4
2.0
1.6
-75
-50
Fig 15. Typical Vgs(th) Vs.
Junction Temperature
-25
T J , Temperature ( °C )
0
25
I D = -250µA
50
Power Mosfet Characteristics
75
100 125
150
30
25
20
15
10
5
0
0.001
Fig 16. Typical Power Vs. Time
0.010
0.100
Time (sec)
1.000
10.000
100.000
7