IRF5803D2PBF International Rectifier, IRF5803D2PBF Datasheet - Page 4

• Manufacturer Part Number: IRF5803D2PBF
• Description: MOSFET P-CH 40V 3.4A 8-SOIC
• Manufacturer: International Rectifier
• Series: FETKY™r

Specifications of IRF5803D2PBF

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Diode (Isolated)
• Rds On (max) @ Id, Vgs: 112 mOhm @ 3.4A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 3.4A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 37nC @ 10V
• Input Capacitance (ciss) @ Vds: 1110pF @ 25V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Single Dual Drain
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 190 mOhms
• Drain-source Breakdown Voltage: - 40 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: - 3.4 A
• Power Dissipation: 2 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Fall Time: 50 ns
• Gate Charge Qg: 25 nC
• Minimum Operating Temperature: - 55 C
• Rise Time: 550 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

2000
1500
1000
4
100
500
0.1
10
1
0
0.4
Fig 7. Typical Source-Drain Diode
1
Fig 5. Typical Capacitance Vs.
Coss
Ciss
Crss
-V
SD
Drain-to-Source Voltage
V DS , Drain-to-Source Voltage (V)
T = 150 C
Forward Voltage
J
,Source-to-Drain Voltage (V)
0.8
V GS = 0V,
C iss
SHORTED
C rss
C oss = C ds + C gd
°
= C gd
10
T = 25 C
= C gs + C gd ,
J
f = 100 KHZ
Power Mosfet Characteristics
1.2
°
V
GS
= 0 V
C ds
1.6
100
100
0.1
10
1
12
10
8
6
4
2
0
Fig 8. Maximum Safe Operating Area
1
0
I =
D
T A = 25°C
T J = 150°C
Single Pulse
Fig 6. Typical Gate Charge Vs.
-3.4A
-V DS , Drain-toSource Voltage (V)
5
Q , Total Gate Charge (nC)
Gate-to-Source Voltage
G
10
OPERATION IN THIS AREA
LIMITED BY R DS (on)
V
V
15
DS
DS
10
=-32V
=-20V
20
www.irf.com
25
100µsec
10msec
1msec
30
100