STD1NK60T4 STMicroelectronics, STD1NK60T4 Datasheet - Page 2

• Manufacturer Part Number: STD1NK60T4
• Description: MOSFET N-CH 600V 1A DPAK
• Manufacturer: STMicroelectronics
• Series: SuperMESH™r

Specifications of STD1NK60T4

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 8.5 Ohm @ 500mA, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 1A
• Vgs(th) (max) @ Id: 3.7V @ 250µA
• Gate Charge (qg) @ Vgs: 10nC @ 10V
• Input Capacitance (ciss) @ Vds: 156pF @ 25V
• Power - Max: 30W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 8.5 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 1 S
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 1 A
• Power Dissipation: 30000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Continuous Drain Current Id: 500mA
• Drain Source Voltage Vds: 600V
• On Resistance Rds(on): 8ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3V
• Rohs Compliant: Yes
• Fall Time: 25 ns
• Rise Time: 5 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-2483-2

STD1NK60 - STD1NK60-1 - STQ1HNK60R - STN1HNK60
2/15
Table 3: Absolute Maximum ratings
( ) Pulse width limited by safe operating area
(1) I
Table 4: Thermal Data
(#) When mounted on FR-4 board of 1 in
Table 5: Avalanche Characteristics
ELECTRICAL CHARACTERISTICS (T
Table 6: On/Off
Rthj-case
Rthj-amb
Rthj-lead
V
Symbol
Symbol
Symbol
dv/dt (1)
SD
R
V
I
(BR)DSS
V
DM
P
I
I
DS(on)
V
V
E
GS(th)
T
I
DSS
GSS
DGR
TOT
I
I
T
AR
T
stg
DS
GS
AS
D
D
1.0A, di/dt 100A/µs, V
j
l
( )
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
Single Pulse Avalanche Energy
(starting T
Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
Gate-body Leakage
Current (V
Gate Threshold Voltage
Static Drain-source On
Resistance
Drain-source Voltage (V
Drain-gate Voltage (R
Gate- source Voltage
Drain Current (continuous) at T
Drain Current (continuous) at T
Drain Current (pulsed)
Total Dissipation at T
Derating Factor
Peak Diode Recovery voltage slope
Operating Junction Temperature
Storage Temperature
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
Thermal Resistance Junction-lead Max
Maximum Lead Temperature For Soldering
Purpose
j
Parameter
DS
= 25 °C, I
DD
= 0)
V
GS
(BR)DSS
Parameter
2
= 0)
Parameter
, 2oz Cu, t < 10 sec
D
C
GS
= I
= 25°C
, T
GS
j
= 20 k )
max)
AR
j
= 0)
, V
T
CASE
JMAX.
DD
C
C
I
V
V
V
V
V
= 25°C
= 100°C
= 50 V)
D
DS
DS
GS
DS
GS
= 1mA, V
=25°C UNLESS OTHERWISE SPECIFIED)
= Max Rating, T
= Max Rating
= ± 30V
= V
= 10V, I
Test Conditions
GS
, I
GS
D
D
= 0.5 A
= 250 µA
= 0
DPAK/IPAK
C
DPAK / IPAK
4.16
275
= 125 °C
100
--
0.63
0.24
1.0
30
4
Max Value
Min.
2.25
600
-55 to 150
TO-92
Value
25
0.025
120
TO-92
± 30
1
600
600
0.25
40
--
0.4
1.6
3
3
Typ.
260
3
8
SOT-223
37.87 (#)
SOT-223
0.025
0.25
0.4
1.6
3.3
--
--
Max.
±100
3.7
8.5
50
1
°C/W
°C/W
°C/W
W/°C
Unit
Unit
Unit
Unit
V/ns
mJ
µA
µA
°C
nA
°C
W
A
V
V
V
V
V
A
A
A