IRLR4343PBF International Rectifier, IRLR4343PBF Datasheet - Page 6

• Manufacturer Part Number: IRLR4343PBF
• Description: MOSFET N-CH 55V 26A DPAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRLR4343PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 50 mOhm @ 4.7A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 26A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 42nC @ 10V
• Input Capacitance (ciss) @ Vds: 740pF @ 50V
• Power - Max: 79W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Current, Drain: 26 A
• Gate Charge, Total: 28 nC
• Package Type: D-Pak (TO-252AA)
• Polarization: N-Channel
• Power Dissipation: 79 W
• Resistance, Drain To Source On: 42 Milliohms
• Temperature, Operating, Maximum: +175 °C
• Temperature, Operating, Minimum: -40 °C
• Time, Turn-off Delay: 23 ns
• Time, Turn-on Delay: 5.7 ns
• Transconductance, Forward: 8.8 S
• Voltage, Breakdown, Drain To Source: 55 V
• Voltage, Forward, Diode: 1.2 V
• Voltage, Gate To Source: ±20 V
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 65 mOhms
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 26 A
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Fall Time: 5.3 ns
• Gate Charge Qg: 28 nC
• Minimum Operating Temperature: - 40 C
• Rise Time: 19 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRLR4343PBF

Fig 17a. Unclamped Inductive Test Circuit
Fig 17b. Unclamped Inductive Waveforms
0
6
I
AS
Fig 19a. Gate Charge Test Circuit

R G
‚
20V
V
+
R
-
V DS
GS
t p
1K
D.U.T
I AS
D.U.T
t p
0.01 Ω
L
ƒ
Fig 16.
+
-
•
•
•
•
DUT
SD
•
•
•
L
15V
V
(BR)DSS
DRIVER
-
+
-
„
G
V DD
HEXFET
VCC
A
+
V
®
+
Power MOSFETs
-
Re-Applied
Voltage
Reverse
Recovery
Current
Driver Gate Drive
D.U.T. I
D.U.T. V
Inductor Curent
V
90%
V
10%
P.W.
V
SD
= 5V for Logic Level Devices
DS
Fig 18b. Switching Time Waveforms
Fig 18a. Switching Time Test Circuit
DS
GS
Waveform
Waveform
Fig 19b Gate Charge Waveform
Vgs(th)
Qgs1 Qgs2
Vds
Ripple ≤ 5%
for N-Channel
Body Diode
Period
t
Body Diode Forward
d(on)
Diode Recovery
Duty Factor < 0.1%
Current
Pulse Width < 1µs
V
GS
t
r
Qgd
dv/dt
Forward Drop
di/dt
V
DS
D =
Qgodr
t
d(off)
Period
P.W.
D.U.T
L
t
D
f
V
V
V
I
SD
DD
GS
DD
Vgs
=10V
+
-
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