IRLR4343PBF International Rectifier, IRLR4343PBF Datasheet - Page 3

• Manufacturer Part Number: IRLR4343PBF
• Description: MOSFET N-CH 55V 26A DPAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRLR4343PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 50 mOhm @ 4.7A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 26A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 42nC @ 10V
• Input Capacitance (ciss) @ Vds: 740pF @ 50V
• Power - Max: 79W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Current, Drain: 26 A
• Gate Charge, Total: 28 nC
• Package Type: D-Pak (TO-252AA)
• Polarization: N-Channel
• Power Dissipation: 79 W
• Resistance, Drain To Source On: 42 Milliohms
• Temperature, Operating, Maximum: +175 °C
• Temperature, Operating, Minimum: -40 °C
• Time, Turn-off Delay: 23 ns
• Time, Turn-on Delay: 5.7 ns
• Transconductance, Forward: 8.8 S
• Voltage, Breakdown, Drain To Source: 55 V
• Voltage, Forward, Diode: 1.2 V
• Voltage, Gate To Source: ±20 V
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 65 mOhms
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 26 A
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Fall Time: 5.3 ns
• Gate Charge Qg: 28 nC
• Minimum Operating Temperature: - 40 C
• Rise Time: 19 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRLR4343PBF

Fig 5. Typical Capacitance vs.Drain-to-Source Voltage
www.irf.com
1000.0
10000
1000
100.0
1000
10.0
100
Fig 3. Typical Transfer Characteristics
0.1
100
10
1.0
0.1
10
1
Fig 1. Typical Output Characteristics
0.1
0
1
TOP
BOTTOM
V DS , Drain-to-Source Voltage (V)
V GS , Gate-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
2
V GS = 0V,
C iss = C gs + C gd , C ds SHORTED
C rss = C gd
C oss = C ds + C gd
VGS
15V
10V
8.0V
4.5V
3.5V
3.0V
2.5V
2.3V
1
Coss
Ciss
Crss
4
2.3V
V DS = 30V
≤ 60µs PULSE WIDTH
≤ 60µs PULSE WIDTH
Tj = 25°C
f = 1 MHZ
10
6
T J = 25°C
10
T J = 175°C
8
100
10
100
Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage
Fig 4. Normalized On-Resistance vs. Temperature
2.5
2.0
1.5
1.0
0.5
1000
100
Fig 2. Typical Output Characteristics
0.1
20
16
12
10
1
-60 -40 -20 0
8
4
0
0.1
0
I D = 19A
V GS = 10V
TOP
BOTTOM
I D = 19A
V DS , Drain-to-Source Voltage (V)
T J , Junction Temperature (°C)
Q G Total Gate Charge (nC)
10
VGS
15V
10V
8.0V
4.5V
3.5V
3.0V
2.5V
2.3V
20 40 60 80 100 120 140 160 180
1
V DS = 44V
VDS= 28V
VDS= 11V
≤ 60µs PULSE WIDTH
Tj = 175°C
20
2.3V
FOR TEST CIRCUIT
SEE FIGURE 19
10
30
3
100
40