IRF6217TRPBF International Rectifier, IRF6217TRPBF Datasheet - Page 6
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IRF6217TRPBF
Manufacturer Part Number
IRF6217TRPBF
Description
MOSFET P-CH 150V 0.7A 8-SOIC
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRF6217TRPBF.pdf
(8 pages)
Specifications of IRF6217TRPBF
Package / Case
8-SOIC (3.9mm Width)
Mounting Type
Surface Mount
Power - Max
2.5W
Fet Type
MOSFET P-Channel, Metal Oxide
Gate Charge (qg) @ Vgs
9nC @ 10V
Vgs(th) (max) @ Id
5V @ 250µA
Current - Continuous Drain (id) @ 25° C
700mA
Drain To Source Voltage (vdss)
150V
Fet Feature
Standard
Rds On (max) @ Id, Vgs
2.4 Ohm @ 420mA, 10V
Transistor Polarity
P-Channel
Drain-source Breakdown Voltage
- 150 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
- 0.7 A
Power Dissipation
2.5 W
Mounting Style
SMD/SMT
Gate Charge Qg
6 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF6217TRPBF
Manufacturer:
IR
Quantity:
20 000
I
IRF6217
A S
Fig 15a&b. Unclamped Inductive Test circuit
6
12V
Fig 14a&b. Basic Gate Charge Test Circuit
V
1.94
1.94
1.92
1.92
1.90
1.90
1.88
1.88
1.86
1.86
1.84
1.84
1.82
1.82
1.80
1.80
GS
Fig 12. On-Resistance Vs. Drain Current
Same Type as D.U.T.
Current Regulator
0.00
.2 F
t p
50K
-3mA
Current Sampling Resistors
.3 F
0.25
I
G
V
(BR)DSS
D.U.T.
and Waveforms
V GS = -10V
and Waveform
I
-I D , Drain Current (A)
D
0.50
+
-
V
DS
-V
R
-20V
G
V
0.75
GS
D S
t p
V
G
I A S
Q
D .U .T
1.00
GS
0 .01
L
Charge
Q
Q
GD
G
1.25
D R IV E R
1.50
15V
V D D
A
9.00
8.00
7.00
6.00
5.00
4.00
3.00
2.00
1.00
Fig 13. On-Resistance Vs. Gate Voltage
35
30
25
20
15
10
5
0
4.5
25
Fig 15c. Maximum Avalanche Energy
Starting Tj, Junction Temperature
6.0
-V GS, Gate -to -Source Voltage (V)
50
Vs. Drain Current
7.5
I D = -0.7A
75
9.0
10.5
100
TOP
BOTTOM
www.irf.com
12.0
( C)
°
125
13.5
-0.6A
-1.1A
-1.4A
I D
15.0
150