IRF6217TRPBF International Rectifier, IRF6217TRPBF Datasheet
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Manufacturer Part Number
IRF6217TRPBF
Description
MOSFET P-CH 150V 0.7A 8-SOIC
Manufacturer
International Rectifier
Specifications of IRF6217TRPBF
Package / Case
8-SOIC (3.9mm Width)
Mounting Type
Surface Mount
Power - Max
2.5W
Fet Type
MOSFET P-Channel, Metal Oxide
Gate Charge (qg) @ Vgs
9nC @ 10V
Vgs(th) (max) @ Id
5V @ 250µA
Current - Continuous Drain (id) @ 25° C
700mA
Drain To Source Voltage (vdss)
150V
Fet Feature
Standard
Rds On (max) @ Id, Vgs
2.4 Ohm @ 420mA, 10V
Transistor Polarity
P-Channel
Drain-source Breakdown Voltage
- 150 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
- 0.7 A
Power Dissipation
2.5 W
Mounting Style
SMD/SMT
Gate Charge Qg
6 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Part Number:
IRF6217TRPBF
Part Number:
IRF6217TRPBF
Part Number:
IRF6217TRPBF
Part Number:
IRF6217TRPBF
Thermal Resistance
l
l
l
l
Absolute Maximum Ratings
www.irf.com
Applications
Notes through
Benefits
I
I
I
P
V
dv/dt
T
T
Symbol
R
R
D
D
DM
J
STG
D
GS
@ T
@ T
JL
JA
Effective C
App. Note AN1001)
and Current
@T
Reset Switch for Active Clamp Reset
DC to DC converters
Low Gate to Drain Charge to Reduce
Fully Characterized Capacitance Including
Fully Characterized Avalanche Voltage
Switching Losses
A
A
A
= 25°C
= 70°C
= 25°C
OSS
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Junction-to-Drain Lead
Junction-to-Ambient
to Simplify Design (See
are on page 8
Parameter
Parameter
SMPS MOSFET
GS
GS
@ 10V
@ 10V
G
S
S
S
V
-150V
DSS
1
2
3
4
T op V ie w
Typ.
300 (1.6mm from case )
–––
–––
HEXFET
2.4 @V
8
6
5
7
-55 to + 150
R
Max.
0.02
DS(on)
-0.7
-0.5
-5.0
± 20
2.5
4.5
D
D
D
D
A
IRF6217
®
GS
Power MOSFET
max
Max.
=-10V
20
50
SO-8
PD - 94359
-0.7A
Units
Units
W/°C
°C/W
02/13/02
I
V/ns
D
°C
W
A
V
1
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IRF6217TRPBF Summary of contents
Applications l Reset Switch for Active Clamp Reset converters Benefits Low Gate to Drain Charge to Reduce l Switching Losses Fully Characterized Capacitance Including l Effective C to Simplify Design (See OSS App. Note AN1001) Fully Characterized ...
IRF6217 Static @ T = 25°C (unless otherwise specified) J Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) I Drain-to-Source Leakage Current DSS ...
VGS TOP -15V -12V -10V -8.0V -7.0V -6.0V -5.5V BOTTOM -5.0V 1 -5.0V 0.1 20µs PULSE WIDTH 0.01 0 Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics 10 ...
IRF6217 10000 0V, C iss = rss = oss = 1000 Ciss 100 Coss 10 Crss ...
T , Case Temperature C Fig 9. Maximum Drain Current Vs. Ambient Temperature 100 D = 0.50 0.20 10 0.10 0.05 0.02 SINGLE PULSE 0.01 (THERMAL RESPONSE) 1 0.1 ...
IRF6217 1.94 1.94 1.92 1.92 1.90 1.90 1.88 1. -10V 1.86 1.86 1.84 1.84 1.82 1.82 1.80 1.80 0.00 0.25 0.50 0. Drain Current (A) Fig 12. On-Resistance Vs. Drain Current Current Regulator Same ...
SO-8 Package Details (. ...
IRF6217 SO-8 Tape and Reel 8.1 ( .318 ) 7.9 ( .312 ) ING DIM E NSIO ...
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