IRF6217TRPBF International Rectifier, IRF6217TRPBF Datasheet - Page 3

• Manufacturer Part Number: IRF6217TRPBF
• Description: MOSFET P-CH 150V 0.7A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF6217TRPBF

• Package / Case: 8-SOIC (3.9mm Width)
• Mounting Type: Surface Mount
• Power - Max: 2.5W
• Fet Type: MOSFET P-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 9nC @ 10V
• Vgs(th) (max) @ Id: 5V @ 250µA
• Current - Continuous Drain (id) @ 25° C: 700mA
• Drain To Source Voltage (vdss): 150V
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 2.4 Ohm @ 420mA, 10V
• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: - 150 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: - 0.7 A
• Power Dissipation: 2.5 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 6 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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0.01
0.01
0.1
0.1
10
10
Fig 3. Typical Transfer Characteristics
Fig 1. Typical Output Characteristics
1
1
0.1
4

TOP
BOTTOM

T = 25
J
-V
-V
DS
5
VGS
-15V
-12V
-10V
-8.0V
-7.0V
-6.0V
-5.5V
-5.0V
GS
, Drain-to-Source Voltage (V)
, Gate-to-Source Voltage (V)
°
C
7
1
8



T = 150
V
20µs PULSE WIDTH
20µs PULSE WIDTH
T = 25
J
DS
J
-5.0V
= -50V
9
10
°
°
C
C
11
12
100
Fig 2. Typical Output Characteristics
0.01
0.1
2.5
2.0
1.5
1.0
0.5
0.0
10
1
Fig 4. Normalized On-Resistance
0.1
-60


TOP
BOTTOM
I
D
=
-40
-V
-0.70A
DS
VGS
-15V
-12V
-10V
-8.0V
-7.0V
-6.0V
-5.5V
-5.0V
-20
T , Junction Temperature
, Drain-to-Source Voltage (V)
J
Vs. Temperature
0
1
20
40

60
IRF6217
20µs PULSE WIDTH
T = 150
J
80
-5.0V
10
100

°
( C)
V
C
°
120
GS
=
140
-10V
3
160
100