SI3443DVTRPBF International Rectifier, SI3443DVTRPBF Datasheet - Page 7
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SI3443DVTRPBF
Manufacturer Part Number
SI3443DVTRPBF
Description
MOSFET P-CH 20V 4.4A 6-TSOP
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.SI3443DVTRPBF.pdf
(7 pages)
Specifications of SI3443DVTRPBF
Package / Case
Micro6™(TSOP-6)
Mounting Type
Surface Mount
Power - Max
2W
Fet Type
MOSFET P-Channel, Metal Oxide
Gate Charge (qg) @ Vgs
15nC @ 4.5V
Vgs(th) (max) @ Id
1.2V @ 250µA
Current - Continuous Drain (id) @ 25° C
4.4A
Drain To Source Voltage (vdss)
20V
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
65 mOhm @ 4.4A, 4.5V
Configuration
Single Quad Drain
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
65 mOhms
Drain-source Breakdown Voltage
- 20 V
Gate-source Breakdown Voltage
12 V
Continuous Drain Current
- 4.4 A
Power Dissipation
2 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Fall Time
72 ns
Gate Charge Qg
11 nC
Minimum Operating Temperature
- 55 C
Rise Time
33 ns
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI3443DVTRPBF
Manufacturer:
IR
Quantity:
20 000
Si3443DV
TSOP-6
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 01/03
www.irf.com
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