SI3443DVTRPBF International Rectifier, SI3443DVTRPBF Datasheet - Page 2

• Manufacturer Part Number: SI3443DVTRPBF
• Description: MOSFET P-CH 20V 4.4A 6-TSOP
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of SI3443DVTRPBF

• Package / Case: Micro6™(TSOP-6)
• Mounting Type: Surface Mount
• Power - Max: 2W
• Fet Type: MOSFET P-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 15nC @ 4.5V
• Vgs(th) (max) @ Id: 1.2V @ 250µA
• Current - Continuous Drain (id) @ 25° C: 4.4A
• Drain To Source Voltage (vdss): 20V
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 65 mOhm @ 4.4A, 4.5V
• Configuration: Single Quad Drain
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 65 mOhms
• Drain-source Breakdown Voltage: - 20 V
• Gate-source Breakdown Voltage: 12 V
• Continuous Drain Current: - 4.4 A
• Power Dissipation: 2 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Fall Time: 72 ns
• Gate Charge Qg: 11 nC
• Minimum Operating Temperature: - 55 C
• Rise Time: 33 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Electrical Characteristics @ T
Source-Drain Ratings and Characteristics
Si3443DV

‚
I
I
V
t
Q
V
R
V
g
I
Q
Q
Q
t
t
t
t
C
C
C
Notes:
SM
DSS
S
rr
GSS
d(on)
r
d(off)
f
V
fs
SD
2
(BR)DSS
DS(on)
GS(th)
rr
gs
gd
iss
oss
rss
g
(BR)DSS
Pulse width
Repetitive rating; pulse width limited by
max. junction temperature.
/ T
J
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
300µs; duty cycle
Parameter
Parameter
J
= 25°C (unless otherwise specified)
ƒ
„
-0.60
––– -0.005 –––
––– 0.034 0.065
––– 0.053 0.090
––– 0.060 0.100
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min. Typ. Max. Units
Min. Typ. Max. Units
-20
–––
–––
–––
R
Surface mounted on FR-4 board, t
Starting T
G
= 25 , I
1079 –––
–––
–––
–––
–––
220
152
–––
–––
––– -100
2.2
2.9
51
30
12
11
12
33
70
72
J
= 25°C, L = 6.8mH
AS
-1.2
–––
-1.2
–––
-1.0
-5.0
100
–––
–––
100
–––
–––
100
77
44
15
50
60
2.0
20
= -3.0A.
V/°C
nC
µA
nA
nC
pF
ns
ns
V
V
V
S
MOSFET symbol
integral reverse
p-n junction diode.
T
di/dt = -100A/µs ‚
V
Reference to 25°C, I
V
V
V
V
V
V
V
V
V
I
V
V
V
I
R
R
V
V
ƒ = 1.0MHz
showing the
T
D
D
J
J
GS
GS
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
DS
G
D
= -4.4A
= -1.0A
= 25°C, I
= 25°C, I
= 10
= 6.0
= 0V, I
= -4.5V, I
= -2.7V, I
= -2.5V, I
= V
= -10V, I
= -20V, V
= -20V, V
= -10V
= 0V
= -10V
= -12V
= 12V
= -4.5V ‚
= -10V, V
GS
, I
D
S
F
D
‚
Conditions
= -250µA
D
= -1.7A, V
= -1.7A
Conditions
D
D
D
GS
GS
GS
= -250µA
= -4.4 A
= -4.4A ‚
= -3.7A ‚
= -3.5A ‚
= 0V
= 0V, T
= -4.5V ‚
D
www.irf.com
= -1mA
GS
J
= 70°C
G
= 0V ‚
S
D