SI3443DVTRPBF International Rectifier, SI3443DVTRPBF Datasheet - Page 4

• Manufacturer Part Number: SI3443DVTRPBF
• Description: MOSFET P-CH 20V 4.4A 6-TSOP
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of SI3443DVTRPBF

• Package / Case: Micro6™(TSOP-6)
• Mounting Type: Surface Mount
• Power - Max: 2W
• Fet Type: MOSFET P-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 15nC @ 4.5V
• Vgs(th) (max) @ Id: 1.2V @ 250µA
• Current - Continuous Drain (id) @ 25° C: 4.4A
• Drain To Source Voltage (vdss): 20V
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 65 mOhm @ 4.4A, 4.5V
• Configuration: Single Quad Drain
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 65 mOhms
• Drain-source Breakdown Voltage: - 20 V
• Gate-source Breakdown Voltage: 12 V
• Continuous Drain Current: - 4.4 A
• Power Dissipation: 2 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Fall Time: 72 ns
• Gate Charge Qg: 11 nC
• Minimum Operating Temperature: - 55 C
• Rise Time: 33 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Si3443DV
4
1600
1200
800
400
100
0.1
10
0
1
Fig 5. Typical Capacitance Vs.
Fig 7. Typical Source-Drain Diode
0.0
1
T = 150 C
Drain-to-Source Voltage
J
-V
-V
0.4
DS
SD
Forward Voltage
°
V
C
C
C
, Drain-to-Source Voltage (V)
,Source-to-Drain Voltage (V)
GS
iss
rss
oss
C iss
C oss
C rss
0.8
=
=
=
=
0V,
C
C
C
gs
gd
ds
T = 25 C
J
+ C
+ C
1.2
10
f = 1MHz
gd ,
gd
°
C
1.6
ds
SHORTED
V
GS
2.0
= 0 V
100
2.4
1000
100
0.1
15
12
Fig 8. Maximum Safe Operating Area
10
9
6
3
0
1
0.1
0
Fig 6. Typical Gate Charge Vs.
I =
T
T
Single Pulse
D
C
J
= 25 C
= 150 C
-4.5A
Gate-to-Source Voltage
OPERATION IN THIS AREA LIMITED
-V
4
DS
°
Q , Total Gate Charge (nC)
°
G
, Drain-to-Source Voltage (V)
8
1
BY R
12
V
DS(on)
DS
=-10V
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10
16
10us
100us
1ms
10ms
20
100
24