IRLML6401TRPBF International Rectifier, IRLML6401TRPBF Datasheet - Page 6

• Manufacturer Part Number: IRLML6401TRPBF
• Description: MOSFET P-CH 12V 4.3A SOT-23
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRLML6401TRPBF

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 50 mOhm @ 4.3A, 4.5V
• Drain To Source Voltage (vdss): 12V
• Current - Continuous Drain (id) @ 25° C: 4.3A
• Vgs(th) (max) @ Id: 950mV @ 250µA
• Gate Charge (qg) @ Vgs: 15nC @ 5V
• Input Capacitance (ciss) @ Vds: 830pF @ 10V
• Power - Max: 1.3W
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Channel Type: P
• Current, Drain: -4.3 A
• Gate Charge, Total: 10 nC
• Package Type: Micro3
• Polarization: P-Channel
• Power Dissipation: 1.3 W
• Resistance, Drain To Source On: 0.05 Ohm
• Temperature, Operating, Maximum: +150 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 250 ns
• Time, Turn-on Delay: 11 ns
• Transconductance, Forward: 8.6 S
• Voltage, Breakdown, Drain To Source: -12 V
• Voltage, Drain To Source: –12 V
• Voltage, Forward, Diode: -1.2 V
• Voltage, Gate To Source: ±8 V
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 50 mOhms
• Drain-source Breakdown Voltage: - 12 V
• Gate-source Breakdown Voltage: 8 V
• Continuous Drain Current: - 4.3 A
• Mounting Style: SMD/SMT
• Gate Charge Qg: 10 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRLML6401PBFTR

6
0.10
0.09
0.08
0.07
0.06
0.05
0.04
0.03
0.02
Fig 12. Typical On-Resistance Vs.
1.0
-V GS, Gate -to -Source Voltage ( V )
2.0
Gate Voltage
3.0
Id = -4.3A
4.0
0.8
0.7
0.6
0.5
0.4
0.3
Fig 14. Typical Threshold Voltage Vs.
-75
5.0
-50
Junction Temperature
6.0
-25
T J , Temperature ( °C )
0
7.0
25
50
0.20
0.15
0.10
0.05
0.00
I D = -250µA
75
Fig 13. Typical On-Resistance Vs.
0
100
125
10
Drain Current
-I D , Drain Current ( A )
VGS = -1.8V
150
20
VGS = -4.5V
www.irf.com
VGS = -2.5V
30
40