IRLML6401TRPBF International Rectifier, IRLML6401TRPBF Datasheet - Page 4

• Manufacturer Part Number: IRLML6401TRPBF
• Description: MOSFET P-CH 12V 4.3A SOT-23
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRLML6401TRPBF

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 50 mOhm @ 4.3A, 4.5V
• Drain To Source Voltage (vdss): 12V
• Current - Continuous Drain (id) @ 25° C: 4.3A
• Vgs(th) (max) @ Id: 950mV @ 250µA
• Gate Charge (qg) @ Vgs: 15nC @ 5V
• Input Capacitance (ciss) @ Vds: 830pF @ 10V
• Power - Max: 1.3W
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Channel Type: P
• Current, Drain: -4.3 A
• Gate Charge, Total: 10 nC
• Package Type: Micro3
• Polarization: P-Channel
• Power Dissipation: 1.3 W
• Resistance, Drain To Source On: 0.05 Ohm
• Temperature, Operating, Maximum: +150 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 250 ns
• Time, Turn-on Delay: 11 ns
• Transconductance, Forward: 8.6 S
• Voltage, Breakdown, Drain To Source: -12 V
• Voltage, Drain To Source: –12 V
• Voltage, Forward, Diode: -1.2 V
• Voltage, Gate To Source: ±8 V
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 50 mOhms
• Drain-source Breakdown Voltage: - 12 V
• Gate-source Breakdown Voltage: 8 V
• Continuous Drain Current: - 4.3 A
• Mounting Style: SMD/SMT
• Gate Charge Qg: 10 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRLML6401PBFTR

4
1200
1000
800
600
400
200
0
100
0.1
10
Fig 5. Typical Capacitance Vs.
Fig 7. Typical Source-Drain Diode
1
1
0.2
Drain-to-Source Voltage
T = 150 C
J
Coss
Crss
Ciss
V DS , Drain-to-Source Voltage (V)
-V
SD
Forward Voltage
°
0.6
,Source-to-Drain Voltage (V)
V GS = 0V,
C iss = C gs + C gd , C ds
C rss = C gd
C oss = C ds + C gd
T = 25 C
10
J
1.0
f = 1 MHZ
°
1.4
V
GS
SHORTED
= 0 V
1.8
100
1000
100
0.1
10
10
8
6
4
2
0
1
Fig 8. Maximum Safe Operating Area
0.1
0
I =
Fig 6. Typical Gate Charge Vs.
D
T
T
Single Pulse
C
J
= 25 C
= 150 C
-4.3A
Gate-to-Source Voltage
OPERATION IN THIS AREA LIMITED
-V
DS
Q , Total Gate Charge (nC)
°
°
G
4
, Drain-to-Source Voltage (V)
1
BY R
8
DS(on)
V
DS
=-10V
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10
10us
100us
1ms
10ms
12
16
100