IRLML6401TRPBF International Rectifier, IRLML6401TRPBF Datasheet - Page 5
![MOSFET P-CH 12V 4.3A SOT-23](/photos/5/48/54881/sot-23-3_sml.jpg)
IRLML6401TRPBF
Manufacturer Part Number
IRLML6401TRPBF
Description
MOSFET P-CH 12V 4.3A SOT-23
Manufacturer
International Rectifier
Series
HEXFET®r
Specifications of IRLML6401TRPBF
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
50 mOhm @ 4.3A, 4.5V
Drain To Source Voltage (vdss)
12V
Current - Continuous Drain (id) @ 25° C
4.3A
Vgs(th) (max) @ Id
950mV @ 250µA
Gate Charge (qg) @ Vgs
15nC @ 5V
Input Capacitance (ciss) @ Vds
830pF @ 10V
Power - Max
1.3W
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Channel Type
P
Current, Drain
-4.3 A
Gate Charge, Total
10 nC
Package Type
Micro3
Polarization
P-Channel
Power Dissipation
1.3 W
Resistance, Drain To Source On
0.05 Ohm
Temperature, Operating, Maximum
+150 °C
Temperature, Operating, Minimum
-55 °C
Time, Turn-off Delay
250 ns
Time, Turn-on Delay
11 ns
Transconductance, Forward
8.6 S
Voltage, Breakdown, Drain To Source
-12 V
Voltage, Drain To Source
–12 V
Voltage, Forward, Diode
-1.2 V
Voltage, Gate To Source
±8 V
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
50 mOhms
Drain-source Breakdown Voltage
- 12 V
Gate-source Breakdown Voltage
8 V
Continuous Drain Current
- 4.3 A
Mounting Style
SMD/SMT
Gate Charge Qg
10 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IRLML6401PBFTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
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Part Number:
IRLML6401TRPBF
Manufacturer:
IR
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36 000
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IR
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IR
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Manufacturer:
IR
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IR
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Part Number:
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Quantity:
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Part Number:
IRLML6401TRPBF/F3G
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IR
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1000
100
5.0
4.0
3.0
2.0
1.0
0.0
0.1
10
0.00001
1
Fig 9. Maximum Drain Current Vs.
25
D = 0.50
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
0.20
0.10
0.05
0.02
0.01
Case Temperature
50
T , Case Temperature ( C)
C
(THERMAL RESPONSE)
0.0001
75
SINGLE PULSE
100
0.001
125
°
t , Rectangular Pulse Duration (sec)
1
150
0.01
80
60
40
20
0
Fig 10. Maximum Avalanche Energy
25
Starting T , Junction Temperature ( C)
1. Duty factor D = t / t
2. Peak T = P
Notes:
0.1
50
Vs. Drain Current
J
J
75
DM
x Z
1
thJA
P
2
100
1
DM
+ T
TOP
BOTTOM
A
t
1
t
125
2
-1.9A
-3.4A
-4.3A
°
I D
5
150
10