APT10040LVFRG Microsemi Power Products Group, APT10040LVFRG Datasheet - Page 4

• Manufacturer Part Number: APT10040LVFRG
• Description: MOSFET N-CH 1000V 25A TO-264
• Manufacturer: Microsemi Power Products Group
• Series: POWER MOS V®r

Specifications of APT10040LVFRG

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 400 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 1000V (1kV)
• Current - Continuous Drain (id) @ 25° C: 25A
• Vgs(th) (max) @ Id: 4V @ 2.5mA
• Gate Charge (qg) @ Vgs: 630nC @ 10V
• Input Capacitance (ciss) @ Vds: 9400pF @ 25V
• Power - Max: 625W
• Mounting Type: Through Hole
• Package / Case: TO-264
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

APT's devices are covered by one or more of the following U.S.patents: 4,895,810
FIGURE 12, GATE CHARGE vs GATE-TO-SOURCE VOLTAGE
100
50
10
12
10
FIGURE 10, MAXIMUM SAFE OPERATING AREA
5
1
8
6
4
2
0
V
1
0
I
T C =+25°C
T J =+150°C
SINGLE PULSE
DS
LIMITED BY R DS (ON)
D
These dimensions are equal to the TO-247 without the mounting hole.
OPERATION HERE
= I
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
D
[Cont.]
Q
T-MAX
100
g
, TOTAL GATE CHARGE (nC)
5
0.40 (.016)
0.79 (.031)
2.21 (.087)
2.59 (.102)
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
10
Dimensions in Millimeters and (Inches)
V DS =250V
200
TM
V DS =100V
(B2) Package Outline
20.80 (.819)
21.46 (.845)
19.81 (.780)
20.32 (.800)
50 100
300
4.50 (.177) Max.
1.01 (.040)
1.40 (.055)
5.45 (.215) BSC
V DS =400V
400
2-Plcs.
500 1000
15.49 (.610)
16.26 (.640)
500
5,256,583
10mS
100µS
1mS
4,748,103
5,045,903
5.38 (.212)
6.20 (.244)
1.65 (.065)
2.13 (.084)
2.87 (.113)
3.12 (.123)
Gate
Drain
Source
5,283,202
5,089,434
FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
40,000
10,000
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
5,000
1,000
TO-264 (L) Package Outline
500
100
100
50
10
Dimensions in Millimeters and (Inches)
5
1
5,182,234
5,231,474
.01
0.3
4.60 (.181)
5.21 (.205)
1.80 (.071)
2.01 (.079)
0.48 (.019)
0.84 (.033)
2.59 (.102)
3.00 (.118)
V
V
DS
SD
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
0.5
T J =+150°C
25.48 (1.003)
26.49 (1.043)
19.81 (.780)
21.39 (.842)
5,019,522
5,434,095
.1
5.79 (.228)
6.20 (.244)
2.29 (.090)
2.69 (.106)
0.7
0.76 (.030)
1.30 (.051)
5.45 (.215) BSC
2.79 (.110)
3.18 (.125)
2-Plcs.
0.9
5,262,336
5,528,058
1
T J =+25°C
19.51 (.768)
20.50 (.807)
APT10040 B2VFR - LVFR
1.1
10
1.3
3.10 (.122)
3.48 (.137)
2.29 (.090)
2.69 (.106)
Gate
Drain
Source
C iss
C rss
C oss
1.5
50