APT10040LVRG Microsemi Power Products Group, APT10040LVRG Datasheet - Page 3

• Manufacturer Part Number: APT10040LVRG
• Description: MOSFET N-CH 1000V 25A TO-264
• Manufacturer: Microsemi Power Products Group
• Series: POWER MOS V®r

Specifications of APT10040LVRG

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 400 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 1000V (1kV)
• Current - Continuous Drain (id) @ 25° C: 25A
• Vgs(th) (max) @ Id: 4V @ 2.5mA
• Gate Charge (qg) @ Vgs: 630nC @ 10V
• Input Capacitance (ciss) @ Vds: 9400pF @ 25V
• Power - Max: 625W
• Mounting Type: Through Hole
• Package / Case: TO-264
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Preformance Curves
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
FIGURE 2, HIGH VOLTAGE OUTPUT CHARACTERISTICS
3.0
2.5
2.0
1.5
1.0
0.5
0.0
80
70
60
50
40
30
20
10
25
20
15
10
0
5
0
-50
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
25
0
V
V DS > I D (ON) x R DS (ON)MAX.
V
I
FIGURE 4, TRANSFER CHARACTERISTICS
D
DS
GS
= 0.5 I
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
V
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
-25
1
, GATE-TO-SOURCE VOLTAGE (VOLTS)
GS
T
J
T
, JUNCTION TEMPERATURE (°C)
T J = +125°C
50
= 10V
D
C
[Cont.]
Graph Deleted
, CASE TEMPERATURE (°C)
2
0
T J = +25°C
25
3
75
50
4
100
75
5
100 125 150
6
T J = -55°C
125
7
150
8
1.15
1.05
0.95
0.90
1.15
1.10
1.05
1.00
0.95
0.90
FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS
1.2
1.1
1.0
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
1.2
1.1
1.0
0.9
0.8
0.7
0.6
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
60
50
40
30
20
10
0
-50
-50
0
0
V
V
DS
GS
FIGURE 5, R
-25
-25
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
= 10V @ 0.5 I
NORMALIZED TO
5
T
I
J
D
, JUNCTION TEMPERATURE (°C)
T
, DRAIN CURRENT (AMPERES)
5
C
10
, CASE TEMPERATURE (°C)
0
0
V GS =10V
DS
25
15
25
D
10
(ON) vs DRAIN CURRENT
[Cont.]
V GS =7, 10 &15V
20
50
50
V GS =20V
15
25
75
75
4.5V
100 125 150
100 125 150
30
5.5V
20
4V
35
5V
6V
25
40