APT20M20LFLLG Microsemi Power Products Group, APT20M20LFLLG Datasheet - Page 3

• Manufacturer Part Number: APT20M20LFLLG
• Description: MOSFET N-CH 200V 100A TO-264
• Manufacturer: Microsemi Power Products Group
• Series: POWER MOS 7®r

Specifications of APT20M20LFLLG

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 20 mOhm @ 50A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 100A
• Vgs(th) (max) @ Id: 5V @ 2.5mA
• Gate Charge (qg) @ Vgs: 110nC @ 10V
• Input Capacitance (ciss) @ Vds: 6850pF @ 25V
• Power - Max: 568W
• Mounting Type: Through Hole
• Package / Case: TO-264
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Case temperature
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
Junction
temp. ( ”C)
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
200
180
160
140
120
100
120
100
2.5
2.0
1.5
1.0
0.5
0.0
80
60
40
20
80
60
40
20
(Watts)
Power
0
0
-50
25
0
V
V DS > I D (ON) x R DS(ON) MAX.
FIGURE 4, TRANSFER CHARACTERISTICS
GS
FIGURE 8, R
250 µSEC. PULSE TEST
1
@ <0.5 % DUTY CYCLE
V
-25
, GATE-TO-SOURCE VOLTAGE (VOLTS)
T
I
GS
D
J
T
= 50A
, JUNCTION TEMPERATURE (°C)
50
= 10V
2
C
, CASE TEMPERATURE (°C)
0
3
RC MODEL
DS(ON)
T J = +125°C
25
75
T J = +25°C
T J = -55°C
4
0.0844
0.138
50
5
vs. TEMPERATURE
100
6
75
7
100 125 150
125
8
0.0124F
0.218F
9
150
10
FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS
1.40
1.30
1.20
1.10
1.00
0.90
0.80
1.15
1.10
1.05
1.00
0.95
0.90
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
250
200
150
100
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
1.2
1.1
1.0
0.9
0.8
0.7
0.6
50
0
-50
-50
0
0
V
DS
FIGURE 5, R
V
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
20
-25
-25
GS
V GS =10V
T
NORMALIZED TO
I
J
D
5
= 10V @ I
, JUNCTION TEMPERATURE (°C)
T
, DRAIN CURRENT (AMPERES)
C
, CASE TEMPERATURE (°C)
40
0
0
V GS =15 &10V
10
DS(ON)
D
25
60
25
= 50A
9V
15
80
vs DRAIN CURRENT
50
50
7.5V
100 120 140 160
75
75
APT20M20B2FLL_LFLL
20
V GS =20V
7V
100 125 150
100 125 150
6.5
25
6V
5.5V
30