APT5010LVFRG Microsemi Power Products Group, APT5010LVFRG Datasheet - Page 2

• Manufacturer Part Number: APT5010LVFRG
• Description: MOSFET N-CH 500V 47A TO-264
• Manufacturer: Microsemi Power Products Group
• Series: POWER MOS V®r

Specifications of APT5010LVFRG

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 100 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 47A
• Vgs(th) (max) @ Id: 4V @ 2.5mA
• Gate Charge (qg) @ Vgs: 470nC @ 10V
• Input Capacitance (ciss) @ Vds: 8900pF @ 25V
• Power - Max: 520W
• Mounting Type: Through Hole
• Package / Case: TO-264
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

DYNAMIC CHARACTERISTICS
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
THERMAL CHARACTERISTICS
1
2
Symbol
Symbol
Symbol
Repetitive Rating: Pulse width limited by maximum junction
temperature.
Pulse Test: Pulse width < 380 S, Duty Cycle < 2%
APT Reserves the right to change, without notice, the specifications and information contained herein.
t
t
I
R
R
C
C
d
d
V
dv
C
Q
Q
RRM
I
Q
Q
(on)
(off)
t
SM
t
I
t
oss
SD
rss
iss
S
rr
gs
gd
/
r
f
JC
JA
g
rr
dt
0.005
0.001
0.05
0.01
0.3
0.1
10
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current
Diode Forward Voltage
Peak Diode Recovery
Reverse Recovery Time
(I
Reverse Recovery Charge
(I
Peak Recovery Current
(I
Characteristic
Junction to Case
Junction to Ambient
S
S
S
-5
= -I
= -I
= -I
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
D
D
D
D=0.5
[Cont.],
[Cont.],
[Cont.],
0.02
0.01
0.05
0.2
0.1
10
di
di
di
/
/
/
-4
dt
dt
dt
3
= 100A/ s)
= 100A/ s)
= 100A/ s)
SINGLE PULSE
dv
1
2
/
dt
(Body Diode)
(V
5
GS
RECTANGULAR PULSE DURATION (SECONDS)
= 0V, I
10
-3
S
= -I
D
[Cont.])
I
I
10
D
D
3
4
5
Test Conditions
= I
= I
-2
V
V
See MIL-STD-750 Method 3471
Starting T
I
V
DD
DD
S
D
D
R
V
V
V
R
f = 1 MHz
V
[Cont.] @ 25 C
[Cont.] @ 25 C
DS
GS
GS
= 200V.
G
GS
= 0.5 V
= 0.5 V
-I
T
T
T
T
T
T
D
= 0.6
j
j
j
j
j
j
= 25V
= 10V
= 15V
= 25 C
= 125 C
= 25 C
= 125 C
= 25 C
= 125 C
= 0V
[Cont.],
j
= +25 C, L = 2.26mH, R
DSS
DSS
10
di
-1
/
dt
= 100A/ s, V
Note:
Peak T J = P DM x Z JC + T C
MIN
MIN
MIN
Duty Factor D =
1.0
DD
t 1
G
= 25 , Peak I
t 2
V
7400
1000
TYP
TYP
TYP
380
312
127
1.6
5.5
DSS
15
27
50
14
16
54
5
t 1
, T
/ t 2
j
150 C, R
APT5010LVFR
8900
1400
MAX
MAX
MAX
0.24
188
250
500
570
470
190
1.3
L
47
75
30
32
80
10
40
5
= 47A
10
G
Amps
Amps
= 2.0 ,
UNIT
UNIT
Volts
V/ns
UNIT
nC
pF
C/W
ns
ns
C