APT6021BLLG Microsemi Power Products Group, APT6021BLLG Datasheet - Page 3

• Manufacturer Part Number: APT6021BLLG
• Description: MOSFET N-CH 600V 29A TO-247
• Manufacturer: Microsemi Power Products Group
• Series: POWER MOS 7®r

Specifications of APT6021BLLG

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 210 mOhm @ 14.5A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 29A
• Vgs(th) (max) @ Id: 5V @ 1mA
• Gate Charge (qg) @ Vgs: 80nC @ 10V
• Input Capacitance (ciss) @ Vds: 3470pF @ 25V
• Power - Max: 400W
• Mounting Type: Through Hole
• Package / Case: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Case temperature. (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
100
Junction
temp. (°C)
2.5
2.0
1.5
1.0
0.5
0.0
90
80
70
60
50
40
30
20
10
30
25
20
15
10
0
5
0
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
-50
25
0
(watts)
Power
V
FIGURE 4, TRANSFER CHARACTERISTICS
V DS > I D (ON) x R DS (ON)MAX.
GS
250 µSEC. PULSE TEST
V
@ <0.5 % DUTY CYCLE
I
-25
, GATE-TO-SOURCE VOLTAGE (VOLTS)
D
T
GS
= 14.5A
J
T
, JUNCTION TEMPERATURE (°C)
50
= 10V
2
C
, CASE TEMPERATURE (°C)
0
T J = +125°C
T J = +25°C
25
75
RC MODEL
4
50
0.131
0.180
100
6
75
100 125 150
T J = -55°C
125
8
0.00789F
0.161F
150
10
FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS
1.15
1.10
1.05
1.00
0.95
0.90
1.15
1.10
1.05
1.00
0.95
0.90
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
1.2
1.2
1.1
1.0
0.9
0.8
0.7
0.6
80
60
40
20
0
-50
-50
0
0
V
DS
V GS =15 &10V
FIGURE 5, R
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
-25
-25
V
T
GS
NORMALIZED TO
I
10
J
D
5
, JUNCTION TEMPERATURE (°C)
T
, DRAIN CURRENT (AMPERES)
= 10V @ 14.5A
C
, CASE TEMPERATURE (°C)
0
0
V GS =10V
10
20
DS
25
25
(ON) vs DRAIN CURRENT
15
30
50
50
7.5V
5.5V
V GS =20V
6.5V
8V
7V
6V
75
75
20
40
100 125 150
100 125 150
25
50
30
60