APT1001RBVRG Microsemi Power Products Group, APT1001RBVRG Datasheet - Page 3

• Manufacturer Part Number: APT1001RBVRG
• Description: MOSFET N-CH 1000V 11A TO-247
• Manufacturer: Microsemi Power Products Group
• Series: POWER MOS V®r

Specifications of APT1001RBVRG

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1 Ohm @ 500mA, 10V
• Drain To Source Voltage (vdss): 1000V (1kV)
• Current - Continuous Drain (id) @ 25° C: 11A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 225nC @ 10V
• Input Capacitance (ciss) @ Vds: 3660pF @ 25V
• Power - Max: 280W
• Mounting Type: Through Hole
• Package / Case: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS
2.5
2.0
1.5
1.0
0.5
0.0
20
16
12
40
30
20
10
12
10
FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
8
4
0
0
8
6
4
2
0
-50
25
V
0
0
V
APT1001RBVR
DS
GS
I
V DS > I D (ON) x R DS (ON)MAX.
D
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
= 0.5 I
, GATE-TO-SOURCE VOLTAGE (VOLTS)
-25
T
V
@ <0.5 % DUTY CYCLE
250 SEC. PULSE TEST
GS
J
V GS =6V, 10V & 15V
T
, JUNCTION TEMPERATURE ( C)
100
T J = +25 C
50
C
= 10V
D
T J = +125 C
, CASE TEMPERATURE ( C)
[Cont.]
2
0
25
200
75
T J = -55 C
50
4
300
100
3.5V
4.5V
75
T J = -55 C
100 125 150
4V
6
400
125
T J = +125 C
150
500
8
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
1.15
1.10
1.05
1.00
0.95
0.90
1.5
1.4
1.2
1.0
0.8
1.2
1.1
1.0
0.9
0.8
0.7
0.6
20
16
12
FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS
8
4
0
-50
-50
V
0
0
DS
FIGURE 5, R
V
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
GS
-25
-25
T
I
J
D
= 10V @ 0.5 I
NORMALIZED TO
, JUNCTION TEMPERATURE ( C)
5
T
, DRAIN CURRENT (AMPERES)
C
4
, CASE TEMPERATURE ( C)
0
0
V GS =10V
10
DS
25
25
(ON) vs DRAIN CURRENT
D
8
V GS =6V & 10V
[Cont.]
15
50
50
12
75
75 100 125 150
20
V GS =20V
V GS =15V
100 125 150
16
3.5V
4.5V
25
5V
4V
20
30