APT6030BVFRG Microsemi Power Products Group, APT6030BVFRG Datasheet - Page 3

• Manufacturer Part Number: APT6030BVFRG
• Description: MOSFET N-CH 600V 21A TO-247
• Manufacturer: Microsemi Power Products Group
• Series: POWER MOS V®r

Specifications of APT6030BVFRG

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 300 mOhm @ 10.5A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 21A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 150nC @ 10V
• Input Capacitance (ciss) @ Vds: 3750pF @ 25V
• Power - Max: 298W
• Mounting Type: Through Hole
• Package / Case: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
2.5
2.0
1.5
1.0
0.5
0.0
40
32
24
16
40
32
24
16
25
20
15
10
FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS
8
0
8
0
5
0
FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS
-50
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
25
0
0
V
V
V DS > I D (ON) x R DS (ON)MAX.
I
DS
GS
D
250 µSEC. PULSE TEST
= 0.5 I
@ <0.5 % DUTY CYCLE
V
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
-25
, GATE-TO-SOURCE VOLTAGE (VOLTS)
GS
T
V GS =5.5V, 6V, 10V & 15V
T J = +125°C
50
J
T J = +25°C
T
, JUNCTION TEMPERATURE (°C)
50
= 10V
C
D
, CASE TEMPERATURE (°C)
[Cont.]
2
0
100
25
75
150
50
4
100
75
T J = -55°C
200
100 125 150
6
4.5V
5V
4V
125
250
150
300
8
1.15
1.10
1.05
1.00
0.95
0.90
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
1.5
1.4
1.3
1.2
1.1
1.0
0.9
1.2
1.1
1.0
0.9
0.8
0.7
0.6
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
40
32
24
16
8
0
FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS
-50
-50
0
0
V
DS
V
FIGURE 5, R
GS
V GS =6V, 10V & 15V
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
-25
-25
T
= 10V @ 0.5 I
I
NORMALIZED TO
J
D
, JUNCTION TEMPERATURE (°C)
T
, DRAIN CURRENT (AMPERES)
4
8
C
, CASE TEMPERATURE (°C)
0
0
V GS =10V
DS
25
25
16
(ON) vs DRAIN CURRENT
8
D
[Cont.]
50
50
12
24
75
75
APT6030BVFR_SVFR
5.5V
100 125 150
V GS =20V
100 125 150
16
32
4.5V
5V
4V
20
40