APT5016BFLLG Microsemi Power Products Group, APT5016BFLLG Datasheet - Page 2

• Manufacturer Part Number: APT5016BFLLG
• Description: MOSFET N-CH 500V 30A TO-247
• Manufacturer: Microsemi Power Products Group
• Series: POWER MOS 7®r

Specifications of APT5016BFLLG

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 160 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 30A
• Vgs(th) (max) @ Id: 5V @ 1mA
• Gate Charge (qg) @ Vgs: 72nC @ 10V
• Input Capacitance (ciss) @ Vds: 2833pF @ 25V
• Power - Max: 329W
• Mounting Type: Through Hole
• Package / Case: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

DYNAMIC CHARACTERISTICS
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
APT Reserves the right to change, without notice, the specifications and information contained herein.
THERMAL CHARACTERISTICS
1 Repetitive Rating: Pulse width limited by maximum junction
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
Symbol
Symbol
Symbol
temperature
R
R
dv
I
t
V
C
t
C
C
Q
RRM
I
Q
Q
d(on)
d(off)
E
E
E
E
SM
t
Q
I
θJC
SD
θJA
S
rr
oss
t
t
/
rss
iss
on
off
on
off
gs
gd
r
rr
f
dt
g
0.40
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current
Diode Forward Voltage
Peak Diode Recovery
Reverse Recovery Time
(I
Reverse Recovery Charge
(I
Peak Recovery Current
(I
Characteristic
Junction to Case
Junction to Ambient
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy
Turn-off Switching Energy
Turn-on Switching Energy
Turn-off Switching Energy
S
S
S
10
= -30A,
= -30A,
= -30A,
-5
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
0.05
0.9
0.7
0.5
0.3
0.1
di
di
di
/
/
/
dt
dt
dt
= 100A/µs)
= 100A/µs)
= 100A/µs)
10
3
-4
dv
1
2
/
dt
(Body Diode)
(V
5
6
6
GS
= 0V, I
RECTANGULAR PULSE DURATION (SECONDS)
S
10
= -30A)
-3
SINGLE PULSE
INDUCTIVE SWITCHING @ 125°C
INDUCTIVE SWITCHING @ 25°C
4 Starting T
5
6 Eon includes diode reverse recovery. See figures 18, 20.
V
RESISTIVE SWITCHING
V
Test Conditions
DD
DD
dv
device itself.
I
I
D
D
I
I
D
D
/
= 333V, V
dt
= 30A, R
= 30A, R
= 333V V
V
V
= 30A @ 25°C
= 30A @ 25°C
V
V
V
R
V
f = 1 MHz
DD
DD
numbers reflect the limitations of the test circuit rather than the
DS
GS
GS
T
T
T
T
T
T
G
GS
j
j
j
j
j
j
= 1.6Ω
10
= 250V
= 250V
= 25°C
= 125°C
= 25°C
= 125°C
= 25°C
= 125°C
= 25V
= 10V
= 15V
= 0V
j
-2
= +25°C, L = 2.89mH, R
G
G
GS
GS
= 5Ω
= 5Ω
= 15V
I
S
= 15V
≤
-
I
D
30A
di
Note:
/
dt
Peak T J = P DM x Z θJC + T C
MIN
MIN
MIN
10
≤ 700A/µs
Duty Factor D =
-1
G
t 1
= 25Ω, Peak I
2833
TYP
TYP
t 2
600
256
172
476
215
TYP
1.3
4.5
12
18
60
72
16
42
10
10
27
14
APT5016BFLL_SFLL
V
R
t 1
≤ 500
/ t 2
MAX
MAX
MAX
120
250
500
0.38
1.3
L
30
15
40
1.0
= 30A
T
J
≤ 150
Amps
Amps
UNIT
Volts
UNIT
V/ns
UNIT
°C/W
°
µC
ns
nC
pF
ns
µ
C
J