APT20M36BFLLG Microsemi Power Products Group, APT20M36BFLLG Datasheet - Page 4

MOSFET N-CH 200V 65A TO-247

APT20M36BFLLG

Manufacturer Part Number
APT20M36BFLLG
Description
MOSFET N-CH 200V 65A TO-247
Manufacturer
Microsemi Power Products Group
Series
POWER MOS 7®r
Datasheet

Specifications of APT20M36BFLLG

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
36 mOhm @ 32.5A, 10V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
65A
Vgs(th) (max) @ Id
5V @ 1mA
Gate Charge (qg) @ Vgs
60nC @ 10V
Input Capacitance (ciss) @ Vds
3080pF @ 25V
Power - Max
329W
Mounting Type
Through Hole
Package / Case
TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
APT20M36BFLLG
Manufacturer:
MCCO
Quantity:
7 134
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
1200
1000
260
100
800
600
400
200
50
10
16
14
12
10
45
40
35
30
25
20
15
10
5
1
8
6
4
2
0
5
0
0
FIGURE 16, SWITCHING ENERGY vs CURRENT
FIGURE 10, MAXIMUM SAFE OPERATING AREA
30
30
1
0
V
T C =+25°C
T J =+150°C
SINGLE PULSE
FIGURE 14, DELAY TIMES vs CURRENT
V
R
T
L = 100µH
LIMITED BY R DS (ON)
V
R
T
L = 100µH
E
diode reverse recovery.
DS
OPERATION HERE
J
DD
G
DD
J
G
ON
I
= 125°C
= 125°C
D
= 5Ω
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
= 5Ω
40
= 133V
40
= 133V
includes
= 65A
50
Q
g
, TOTAL GATE CHARGE (nC)
50
50
V DS =100V
5
100
E
on
V DS =40V
60
60
10
I
I
D
D
150
t
d(on)
E
(A)
(A)
off
70
70
t
d(off)
200
V DS =160V
80
80
50
250
100
90
90
300
200
100
100
100µS
1mS
10mS
10,000
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
5,000
1,000
FIGURE 11,CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
1000
500
100
200
100
120
100
800
600
400
200
50
10
50
10
FIGURE 15, RISE AND FALL TIMES vs CURRENT
80
60
40
20
5
1
0
0
0.3
30
0
0
V
V
V
R
T
L = 100µH
DS
SD
J
DD
G
= 125°C
5
= 5Ω
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
E
= 133V
40
0.5
on
R
10
10 15 20 25 30
G
T J =+150°C
, GATE RESISTANCE (Ohms)
50
0.7
E
t
off
f
20
60
I
D
0.9
(A)
70
T J =+25°C
30
V
I
T
L = 100µH
E
diode reverse recovery.
t
D
r
DD
J
ON
1.1
= 65A
= 125°C
= 133V
includes
35 40 45 50
80
40
1.3
90
C iss
C oss
C rss
1.5
100
50

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