APT5020BVFRG Microsemi Power Products Group, APT5020BVFRG Datasheet - Page 3

• Manufacturer Part Number: APT5020BVFRG
• Description: MOSFET N-CH 500V 26A TO-247
• Manufacturer: Microsemi Power Products Group
• Series: POWER MOS V®r

Specifications of APT5020BVFRG

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 200 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 26A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 225nC @ 10V
• Input Capacitance (ciss) @ Vds: 4440pF @ 25V
• Power - Max: 300W
• Mounting Type: Through Hole
• Package / Case: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS
2.5
2.0
1.5
1.0
0.5
0.0
50
40
30
20
10
50
40
30
20
10
30
25
20
15
10
FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
0
0
5
0
-50
25
V
0
0
V
APT5020BVFR
DS
GS
I
V DS > I D (ON) x R DS (ON)MAX.
D
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
= 0.5 I
, GATE-TO-SOURCE VOLTAGE (VOLTS)
-25
T
V
@ <0.5 % DUTY CYCLE
250 SEC. PULSE TEST
GS
J
V GS =6V, 7V, 10V & 15V
T
, JUNCTION TEMPERATURE ( C)
50
50
C
= 10V
T J = +125 C
D
, CASE TEMPERATURE ( C)
T J = +25 C
[Cont.]
2
0
100
25
75
T J = -55 C
50
4
150
100
4.5V
75
5.5V
T J = -55 C
100 125 150
4V
5V
6
200
125
T J = +125 C
150
250
8
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
1.15
1.10
1.05
1.00
0.95
0.90
1.8
1.6
1.4
1.2
1.0
0.8
1.2
1.1
1.0
0.9
0.8
0.7
0.6
50
40
30
20
10
FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS
0
-50
-50
0
V
0
DS
FIGURE 5, R
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
V
-25
-25
T
GS
I
J
D
, JUNCTION TEMPERATURE ( C)
T
= 10V @ 0.5 I
, DRAIN CURRENT (AMPERES)
NORMALIZED TO
C
2
, CASE TEMPERATURE ( C)
20
V GS =7V & 10V
0
0
V GS =10V
DS
25
25
(ON) vs DRAIN CURRENT
4
D
[Cont.]
40
50
50
6
75
75 100 125 150
V GS =15V
V GS =20V
100 125 150
60
8
5.5V
4.5V
4V
6V
5V
10
80