APT5018BLLG Microsemi Power Products Group, APT5018BLLG Datasheet - Page 3

• Manufacturer Part Number: APT5018BLLG
• Description: MOSFET N-CH 500V 27A TO-247
• Manufacturer: Microsemi Power Products Group
• Series: POWER MOS 7®r

Specifications of APT5018BLLG

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 180 mOhm @ 13.5A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 27A
• Vgs(th) (max) @ Id: 5V @ 1mA
• Gate Charge (qg) @ Vgs: 58nC @ 10V
• Input Capacitance (ciss) @ Vds: 2596pF @ 25V
• Power - Max: 300W
• Mounting Type: Through Hole
• Package / Case: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Performance Curves
Case temperature
Junction
temp. ( ”C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
(Watts)
Power
2.5
2.0
1.5
1.0
0.5
0.0
80
60
40
20
30
25
20
15
10
0
5
0
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
-50
25
0
V
V DS > I D (ON) x R DS (ON)MAX.
FIGURE 4, TRANSFER CHARACTERISTICS
GS
250 µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
V
-25
I
, GATE-TO-SOURCE VOLTAGE (VOLTS)
D
T
GS
J
= 13.5A
T
, JUNCTION TEMPERATURE (°C)
50
= 10V
T J = +125°C
2
C
, CASE TEMPERATURE (°C)
T J = +25°C
0
RC MODEL
25
75
0.161
0.259
4
50
100
6
75
100 125 150
T J = -55°C
125
8
0.00994F
0.236F
150
10
FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS
1.14
1.13
1.12
1.10
1.00
0.90
0.80
1.15
1.10
1.05
1.00
0.95
0.90
0.85
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
1.2
1.1
1.0
0.9
0.8
0.7
0.6
80
60
40
20
0
-50
-50
0
0
V
DS
FIGURE 5, R
V GS =15 &10V
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
V
-25
-25
T
GS
NORMALIZED TO
10
I
J
D
5
T
, JUNCTION TEMPERATURE (°C)
= 10V @ 13.5A
, DRAIN CURRENT (AMPERES)
C
V GS =10V
, CASE TEMPERATURE (°C)
0
0
10
20
DS
25
25
(ON) vs DRAIN CURRENT
15
30
50
50
5.5V
6.5V
7.5V
7V
6V
8V
75
75
20
40
V GS =20V
100 125 150
100 125 150
APT5018BLL - SLL
25
50
30
60