BUK7109-75ATE,118 NXP Semiconductors, BUK7109-75ATE,118 Datasheet - Page 13

• Manufacturer Part Number: BUK7109-75ATE,118
• Description: MOSFET N-CH 75V 75A D2PAK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK7109-75ATE,118

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Diode (Isolated)
• Rds On (max) @ Id, Vgs: 9 mOhm @ 50A, 10V
• Drain To Source Voltage (vdss): 75V
• Current - Continuous Drain (id) @ 25° C: 75A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 121nC @ 10V
• Input Capacitance (ciss) @ Vds: 4700pF @ 25V
• Power - Max: 272W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (4 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.009 Ohms
• Drain-source Breakdown Voltage: 75 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 120 A
• Power Dissipation: 272 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934057282118; BUK7109-75ATE /T3; BUK7109-75ATE /T3

NXP Semiconductors
8. Revision history
Table 7.
BUK7109-75ATE_2
Product data sheet
Document ID
BUK7109-75ATE_2
Modifications:
BUK71_7909_75ATE-01
(9397 750 09878)
Revision history
Release date
20090210
20020812
•
•
•
The format of this data sheet has been redesigned to comply with the new identity
guidelines of NXP Semiconductors.
Legal texts have been adapted to the new company name where appropriate.
Type number BUK7109-75ATE separated from data sheet BUK71_7909_75ATE-01.
Data sheet status
Product data sheet
Product data sheet
Rev. 02 — 10 February 2009
Change notice
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-
N-channel TrenchPLUS standard level FET
BUK7109-75ATE
Supersedes
BUK71_7909_75ATE-01
-
© NXP B.V. 2009. All rights reserved.
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