BUK7109-75ATE,118 NXP Semiconductors, BUK7109-75ATE,118 Datasheet - Page 10

• Manufacturer Part Number: BUK7109-75ATE,118
• Description: MOSFET N-CH 75V 75A D2PAK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK7109-75ATE,118

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Diode (Isolated)
• Rds On (max) @ Id, Vgs: 9 mOhm @ 50A, 10V
• Drain To Source Voltage (vdss): 75V
• Current - Continuous Drain (id) @ 25° C: 75A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 121nC @ 10V
• Input Capacitance (ciss) @ Vds: 4700pF @ 25V
• Power - Max: 272W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (4 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.009 Ohms
• Drain-source Breakdown Voltage: 75 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 120 A
• Power Dissipation: 272 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934057282118; BUK7109-75ATE /T3; BUK7109-75ATE /T3

NXP Semiconductors
BUK7109-75ATE_2
Product data sheet
Fig 13. Transfer characteristics: drain current as a
Fig 15. Forward transconductance as a function of
(mV)
V
100
700
600
500
400
F
(A)
I D
75
50
25
0
function of gate-source voltage; typical values
drain current; typical values
0
0
50
2
175 °C
100
4
T j = 25 °C
6
150
V GS (V)
T
03ni84
j
(°C)
03ne84
Rev. 02 — 10 February 2009
8
200
Fig 14. Gate-source voltage as a function of turn-on
Fig 16. Temperature coefficient of temperature sense
(mV/K)
−1.70
−1.60
−1.50
−1.40
S
V GS
F
(V)
10
8
6
4
2
0
645
gate charge; typical values
diode as a function of forward voltage; typical
values
0
N-channel TrenchPLUS standard level FET
655
BUK7109-75ATE
14 V
50
max
min
typ
V DS = 60 V
100
665
Q G (nC)
V
© NXP B.V. 2009. All rights reserved.
F
(mV)
03ni92
03ne85
150
675
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