BUK7109-75AIE,118 NXP Semiconductors, BUK7109-75AIE,118 Datasheet - Page 8

MOSFET N-CH 75V 75A D2PAK

BUK7109-75AIE,118

Manufacturer Part Number
BUK7109-75AIE,118
Description
MOSFET N-CH 75V 75A D2PAK
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Datasheet

Specifications of BUK7109-75AIE,118

Package / Case
D²Pak, TO-263 (4 leads + tab)
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Current Sensing
Rds On (max) @ Id, Vgs
9 mOhm @ 50A, 10V
Drain To Source Voltage (vdss)
75V
Current - Continuous Drain (id) @ 25° C
75A
Vgs(th) (max) @ Id
4V @ 1mA
Gate Charge (qg) @ Vgs
121nC @ 10V
Input Capacitance (ciss) @ Vds
4700pF @ 25V
Power - Max
272W
Mounting Type
Surface Mount
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.009 Ohm @ 10 V
Drain-source Breakdown Voltage
75 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
120 A
Power Dissipation
272000 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934057281118
BUK7109-75AIE /T3
BUK7109-75AIE /T3
NXP Semiconductors
BUK7109-75AIE_2
Product data sheet
Fig 9.
Fig 11. Forward transconductance as a function of
V
GS(th)
(V)
g fs
(S)
80
60
40
20
0
5
4
3
2
1
0
−60
junction temperature
drain current; typical values
Gate-source threshold voltage as a function of
0
25
0
50
60
max
min
typ
75
120
I D (A)
T
j
03ni83
(°C)
03aa32
100
Rev. 02 — 10 February 2009
180
Fig 10. Sub-threshold drain current as a function of
Fig 12. Input, output and reverse transfer capacitances
(A)
8000
6000
4000
2000
(pF)
I
10
10
10
10
10
10
D
C
−1
−2
−3
−4
−5
−6
0
10 -2
gate-source voltage
as a function of drain-source voltage; typical
values
0
N-channel TrenchPLUS standard level FET
10 -1
C rss
2
BUK7109-75AIE
min
1
typ
C iss
C oss
4
10
max
V
© NXP B.V. 2009. All rights reserved.
GS
V DS (V)
03ni97
(V)
03aa35
10 2
6
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