BUK7109-75AIE,118 NXP Semiconductors, BUK7109-75AIE,118 Datasheet - Page 4

• Manufacturer Part Number: BUK7109-75AIE,118
• Description: MOSFET N-CH 75V 75A D2PAK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK7109-75AIE,118

• Package / Case: D²Pak, TO-263 (4 leads + tab)
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Current Sensing
• Rds On (max) @ Id, Vgs: 9 mOhm @ 50A, 10V
• Drain To Source Voltage (vdss): 75V
• Current - Continuous Drain (id) @ 25° C: 75A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 121nC @ 10V
• Input Capacitance (ciss) @ Vds: 4700pF @ 25V
• Power - Max: 272W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.009 Ohm @ 10 V
• Drain-source Breakdown Voltage: 75 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 120 A
• Power Dissipation: 272000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934057281118; BUK7109-75AIE /T3; BUK7109-75AIE /T3

NXP Semiconductors
BUK7109-75AIE_2
Product data sheet
Fig 1.
Fig 3.
P
(%)
(A)
der
I D
120
10 3
10 2
80
40
10
1
0
function of mounting base temperature
Normalized total power dissipation as a
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
0
1
Capped at 75 A due to package
Limit R DSon = V DS /I D
50
100
150
T
mb
10
03na19
(°C)
DC
Rev. 02 — 10 February 2009
200
Fig 2.
120
I D
(A)
80
40
0
mounting base temperature
Continuous drain current as a function of
0
N-channel TrenchPLUS standard level FET
Capped at 75 A due to package
100 μs
1 ms
10 ms
100 ms
t p = 10 μs
10 2
50
BUK7109-75AIE
V DS (V)
100
150
© NXP B.V. 2009. All rights reserved.
T mb (°C)
03ni96
03ni95
10 3
200
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