BUK764R0-55B,118 NXP Semiconductors, BUK764R0-55B,118 Datasheet - Page 7
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BUK764R0-55B,118
Manufacturer Part Number
BUK764R0-55B,118
Description
MOSFET N-CH 55V 75A D2PAK
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Datasheet
1.BUK764R0-55B118.pdf
(14 pages)
Specifications of BUK764R0-55B,118
Package / Case
D²Pak, TO-263 (2 leads + tab)
Mounting Type
Surface Mount
Power - Max
300W
Fet Type
MOSFET N-Channel, Metal Oxide
Gate Charge (qg) @ Vgs
86nC @ 10V
Vgs(th) (max) @ Id
4V @ 1mA
Current - Continuous Drain (id) @ 25° C
75A
Drain To Source Voltage (vdss)
55V
Fet Feature
Standard
Rds On (max) @ Id, Vgs
4 mOhm @ 25A, 10V
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.004 Ohm @ 10 V
Drain-source Breakdown Voltage
55 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
193 A
Power Dissipation
300000 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934057091118::BUK764R0-55B /T3::BUK764R0-55B /T3
NXP Semiconductors
BUK764R0-55B
Product data sheet
Fig 6.
Fig 8.
(A)
(A)
I
I
10
10
10
10
10
10
D
D
300
250
200
150
100
50
−1
−2
−3
−4
−5
−6
0
function of drain-source voltage; typical values
gate-source voltage
Output characteristics: drain current as a
Sub-threshold drain current as a function of
0
0
10
20
7
2
6.5
2
4
min
6
typ
6
4
V
GS
max
(V) = 4
V
All information provided in this document is subject to legal disclaimers.
8
GS
V
5
4.5
DS
5.5
(V)
03nh22
03aa35
(V)
10
6
Rev. 5 — 22 April 2011
Fig 7.
Fig 9.
R
(m Ω)
g
(S)
DSon
fs
120
100
80
60
40
20
7
6
5
4
3
0
of gate-source voltage; typical values
drain current; typical values
Drain-source on-state resistance as a function
Forward transconductance as a function of
5
0
N-channel TrenchMOS standard level FET
10
20
BUK764R0-55B
15
40
V
© NXP B.V. 2011. All rights reserved.
I
GS
D
(A)
(V)
03nh21
03nh19
20
60
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