BUK764R0-55B,118 NXP Semiconductors, BUK764R0-55B,118 Datasheet - Page 3
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BUK764R0-55B,118
Manufacturer Part Number
BUK764R0-55B,118
Description
MOSFET N-CH 55V 75A D2PAK
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Datasheet
1.BUK764R0-55B118.pdf
(14 pages)
Specifications of BUK764R0-55B,118
Package / Case
D²Pak, TO-263 (2 leads + tab)
Mounting Type
Surface Mount
Power - Max
300W
Fet Type
MOSFET N-Channel, Metal Oxide
Gate Charge (qg) @ Vgs
86nC @ 10V
Vgs(th) (max) @ Id
4V @ 1mA
Current - Continuous Drain (id) @ 25° C
75A
Drain To Source Voltage (vdss)
55V
Fet Feature
Standard
Rds On (max) @ Id, Vgs
4 mOhm @ 25A, 10V
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.004 Ohm @ 10 V
Drain-source Breakdown Voltage
55 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
193 A
Power Dissipation
300000 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934057091118::BUK764R0-55B /T3::BUK764R0-55B /T3
NXP Semiconductors
4. Limiting values
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
[2]
[3]
[4]
[5]
[6]
[7]
BUK764R0-55B
Product data sheet
Symbol
V
V
V
I
I
P
T
T
Source-drain diode
I
I
Avalanche ruggedness
E
E
D
DM
S
SM
stg
j
DS
DGR
GS
tot
DS(AL)S
DS(AL)R
Continuous current is limited by package.
Current is limited by power dissipation chip rating.
Refer to document 9397 750 12572 for further information.
Maximum value not quoted. Repetitive rating defined in avalanche rating figure.
Single-pulse avalanche rating limited by maximum junction temperature of 175 °C.
Repetitive avalanche rating limited by an average junction temperature of 170 °C.
Refer to application note AN10273 for further information.
Limiting values
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
peak drain current
total power dissipation
storage temperature
junction temperature
source current
peak source current
non-repetitive drain-source
avalanche energy
repetitive drain-source
avalanche energy
All information provided in this document is subject to legal disclaimers.
Conditions
T
R
T
see
T
T
see
T
T
pulsed; t
I
V
see
D
j
mb
mb
mb
mb
mb
Rev. 5 — 22 April 2011
GS
GS
≥ 25 °C; T
= 75 A; V
Figure 4
Figure 4
Figure 3
= 25 °C; V
= 100 °C; V
= 25 °C; pulsed; t
= 25 °C; see
= 25 °C
= 10 V; T
= 20 kΩ
p
≤ 10 µs; T
sup
j
≤ 175 °C
j(init)
GS
≤ 55 V; R
GS
Figure 2
= 10 V; see
= 25 °C; unclamped
= 10 V; see
mb
p
= 25 °C
≤ 10 µs;
N-channel TrenchMOS standard level FET
GS
= 50 Ω;
Figure
Figure 1
1;
BUK764R0-55B
[4][5][6][
[2][3]
[2][1]
[1]
[1]
[1]
7]
Min
-
-
-20
-
-
-
-
-
-55
-55
-
-
-
-
-
© NXP B.V. 2011. All rights reserved.
175
175
Max
55
55
20
75
193
75
774
300
193
75
774
1.2
-
Unit
V
V
V
A
A
A
A
W
°C
°C
A
A
A
J
J
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