PSMN004-60P,127 NXP Semiconductors, PSMN004-60P,127 Datasheet - Page 6

• Manufacturer Part Number: PSMN004-60P,127
• Description: MOSFET N-CH 60V 75A TO220AB
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of PSMN004-60P,127

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 3.6 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 75A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 168nC @ 10V
• Input Capacitance (ciss) @ Vds: 8300pF @ 25V
• Power - Max: 230W
• Mounting Type: Through Hole
• Package / Case: TO-220AB-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934057040127; PSMN004-60P; PSMN004-60P

Philips Semiconductors
9397 750 09156
Product data
Fig 5. Output characteristics: drain current as a
Fig 7. Drain-source on-state resistance as a function
R DSon
0.015
0.005
( )
0.01
T
T
300
200
100
(A)
I D
j
j
0
= 25 C
0
= 25 C
function of drain-source voltage; typical values.
of drain current; typical values.
0
0
T j = 25 ºC
V GS = 20 V
20V
5 V
10 V
0.4
8 V
7.5 V
100
5.5 V
10 V
0.8
8 V
1.2
200
7 V
6 V
V GS = 4.5 V
7 V
T j = 25 C
1.6
6.5 V
I D (A)
V DS (V)
6.5 V
5.5 V
03ah82
o3ah83
6 V
5 V
300
2
Rev. 01 — 26 April 2002
N-channel enhancement mode field-effect transistor
Fig 6. Transfer characteristics: drain current as a
Fig 8. Normalized drain-source on-state resistance
(A)
I D
a
T
a
100
j
80
60
40
20
2.4
1.8
= 25 C and 175 C; V
1.2
0.6
=
0
function of gate-source voltage; typical values.
factor as a function of junction temperature.
0
0
-60
---------------------------- -
R
DSon 25 C
V DS > I D x R DSon
R
DSon
1
PSMN004-60P/60B
0
2
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
DS
T j = 175 ºC
3
> I
60
D
x R
4
DSon
120
T j ( C)
25 ºC
5
V GS (V)
03ah84
180
6
6 of 13